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Nexperia N-Channel MOSFET 4.4 A 30 V Enhancement Mode Surface Mount 3-Pin SOT-23 Package PMV40UN2R

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Nexperia N-Channel MOSFET 4.4 A 30 V Enhancement Mode Surface Mount 3-Pin SOT-23 Package PMV40UN2R

Name: Nexperia N-Channel MOSFET 4.4 A 30 V Enhancement Mode Surface Mount 3-Pin SOT-23 Package PMV40UN2R
Brand: Nexperia
SKU: 145251
Price: 0.14 USD
Availability: InStock

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Category Discrete Semiconductor Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV40UN2R
Width	1.4mm
Mount Type	Surface
Series	PMV40UN2
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	4.4A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	44mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5W
Typical Gate Charge Qg @ Vgs	7nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	1.2V

Key Features

Features a compact 3-pin SOT-23 package suitable for surface mounting.
Operates in enhancement mode with an N-type channel for reliable switching.
Has a low maximum drain-source resistance of 44 milliohms for efficient conduction.
Typical gate charge is low at 7 nanocoulombs, improving switching performance.
Operates across a temperature range from -55°C to 150°C, suitable for industrial applications.
Maximum power dissipation rating of 5 watts ensures reliability in power circuits.
Gate-source voltage tolerance ranges from -12 V to +12 V providing flexibility in design.
Measures 3 mm in length, 1.4 mm in width, and 1 mm in height for compact PCB layouts.

Product Description

Nexperia PMV40UN2R is a high-performance N-Channel MOSFET transistor designed for surface mount applications requiring compact size and efficient power handling. This device operates with a maximum continuous drain current of 4.4 A and a maximum drain-source voltage of 30 V, making it suitable for a wide range of electronic circuits including power management, amplification, and switching.

The PMV40UN2R features an enhancement mode N-channel with a low on-resistance (44 mΩ) which minimizes conduction losses. It has a typical gate charge of 7 nC, contributing to fast switching speeds which is critical in power-sensitive and high-frequency operations.

Engineered to withstand operating temperatures from -55°C up to 150°C, it ensures durability in demanding industrial, consumer electronics, and automotive environments. The compact SOT-23 package with 3 pins enables easy PCB mounting while conserving board space in modern designs.

Additional specifications include a maximum power dissipation of 5 W and robust gate-source voltage handling between -12 V and +12 V. The forward voltage drop is 1.2 V, enhancing efficiency in conduction.

Compact 3-pin SOT-23 package allows surface mounting on PCBs. Low on-resistance (44 mΩ) improves power efficiency. Wide operating temperature range suitable for industrial applications. Enhancement mode N-Channel MOSFET for reliable switching.

Maximum drain current of 4.4 A and voltage rating of 30 V. Typical gate charge of 7 nC ensures fast switching. Maximum power dissipation rated at 5 W for durability. Gate-source voltage tolerance between -12 V to +12 V.

This MOSFET is ideal for electronics design in industrial machinery, power supplies, automotive electronics, and consumer electronic products where efficient, compact, and reliable switching components are needed. For more options and detailed technical documents, users are encouraged to explore the semiconductor category on EnvMart.

Explore more products in our Discrete Semiconductor category.