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STMicroelectronics High Voltage NPN Transistor 4A 800V TO-220 3-Pin BUL216

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 29.75mm
Length 10.4mm
Model BUL216
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 800V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 1600V
Maximum Power Dissipation Pd 9W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single
STMicroelectronics Transistor, 5 A NPN, 800 V, 3-Pin TO-220Brand STMicroelectronics

Key Features

  • Supports a maximum collector current of 4 amps for high load applications.
  • Maximum collector-emitter voltage rating of 800 volts for high voltage circuits.
  • TO-220 through-hole package with 3 pins for easy mounting and heat dissipation.
  • Single transistor configuration with NPN polarity suitable for switching and amplification.
  • Minimum DC current gain hFE of 10 ensures sufficient amplification.
  • Maximum power dissipation of 9 watts allowing moderate power use.
  • Maximum operating temperature up to 150°C for reliable high-temperature usage.
  • Rated for maximum collector-base voltage of 1600 volts and emitter-base voltage of 9 volts.

Product Description

STMicroelectronics BUL216 is a high voltage, high current NPN bipolar transistor housed in a TO-220 package with through-hole mounting. It supports a maximum collector current rating of 4 amperes and a collector-emitter voltage of 800 volts, making it suitable for power switching and amplification in industrial and electronic circuits.

This transistor features a single NPN configuration with a minimum DC current gain (hFE) of 10 and can dissipate power up to 9 watts safely at operating temperatures reaching 150°C. Its robust voltage ratings, including 1600V collector-base and 9V emitter-base voltage maximums, make it ideal for high voltage applications.

The compact TO-220 package with 3 pins provides efficient heat dissipation and ease of mounting in through-hole PCB designs. The device dimensions are 10.4mm in length, 29.75mm height, and 4.6mm width, allowing integration into various power and switching circuits.

Typical applications include power supplies, motor control circuits, and high voltage switching in industrial, electronic, and automation equipment. The reliable performance of the BUL216 transistor ensures stable and efficient operation under demanding electrical and thermal conditions.

Maximum DC collector current: 4A. Maximum collector-emitter voltage: 800V. Power dissipation up to 9W. Operating temperature max 150°C. TO-220 package with 3 pins. NPN single transistor configuration. Minimum current gain hFE 10.

Dimensions: 10.4mm x 29.75mm x 4.6mm.

For engineers and technicians sourcing reliable discrete semiconductors, this transistor from STMicroelectronics offers proven quality and performance. Explore our category of Bipolar Transistors to find compatible components for your power electronics projects.

STMicroelectronics High Voltage NPN Transistor 4A 800V TO-220 3-Pin BUL216
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Frequently Asked Questions

The maximum collector current for the BUL216 transistor is 4 amperes.

This model has a maximum collector-emitter voltage rating of 800 volts.

It can safely dissipate power up to 9 watts.

The BUL216 features a single NPN configuration.

The dimensions of the TO-220 package are 10.4mm in length, 29.75mm in height, and 4.6mm in width.

The minimum DC current gain (hFE) for the BUL216 is 10.

The maximum operating temperature for the BUL216 is 150°C.

It supports through-hole mounting.

The maximum collector-base voltage rating is 1600 volts.

Typical applications include power supplies, motor control circuits, and high voltage switching in industrial and electronic equipment.

The maximum emitter-base voltage for this transistor is 9 volts.

The TO-220 package has 3 pins.

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