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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 29.75mm |
| Length | 10.4mm |
| Model | BUL216 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 800V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 1600V |
| Maximum Power Dissipation Pd | 9W |
| Maximum DC Collector Current Idc | 4A |
| Transistor Configuration | Single |
| STMicroelectronics Transistor, 5 A NPN, 800 V, 3-Pin TO-220Brand | STMicroelectronics |
STMicroelectronics BUL216 is a high voltage, high current NPN bipolar transistor housed in a TO-220 package with through-hole mounting. It supports a maximum collector current rating of 4 amperes and a collector-emitter voltage of 800 volts, making it suitable for power switching and amplification in industrial and electronic circuits.
This transistor features a single NPN configuration with a minimum DC current gain (hFE) of 10 and can dissipate power up to 9 watts safely at operating temperatures reaching 150°C. Its robust voltage ratings, including 1600V collector-base and 9V emitter-base voltage maximums, make it ideal for high voltage applications.
The compact TO-220 package with 3 pins provides efficient heat dissipation and ease of mounting in through-hole PCB designs. The device dimensions are 10.4mm in length, 29.75mm height, and 4.6mm width, allowing integration into various power and switching circuits.
Typical applications include power supplies, motor control circuits, and high voltage switching in industrial, electronic, and automation equipment. The reliable performance of the BUL216 transistor ensures stable and efficient operation under demanding electrical and thermal conditions.
Maximum DC collector current: 4A. Maximum collector-emitter voltage: 800V. Power dissipation up to 9W. Operating temperature max 150°C. TO-220 package with 3 pins. NPN single transistor configuration. Minimum current gain hFE 10.
Dimensions: 10.4mm x 29.75mm x 4.6mm.
For engineers and technicians sourcing reliable discrete semiconductors, this transistor from STMicroelectronics offers proven quality and performance. Explore our category of Bipolar Transistors to find compatible components for your power electronics projects.
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