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STMicroelectronics Switching Diode Isolated 90A 4-Pin 1200V ISOTOP STTH9012TV1
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 12.2mm |
| Length | 38.2mm |
| Model | STTH9012TV1 |
| Width | 25.5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | ISOTOP |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Diode Configuration | Isolated |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A |
| Maximum Forward Voltage Vf | 1.9V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 90A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V |
Key Features
- Provides a maximum forward current of 90 amperes.
- Features a maximum peak reverse repetitive voltage of 1200 volts.
- Constructed with a silicon junction in an isolated ISOTOP 4-pin surface mount package.
- Capable of operating in temperature ranges from -65°C to 150°C.
- Exhibits a peak non-repetitive forward surge current rating of 420 amperes.
- Offers a fast peak reverse recovery time of 50 nanoseconds.
- Maximum forward voltage drop is 1.9 volts.
- Compact dimensions of 38.2mm length, 25.5mm width, and 12.2mm height.
Product Description
The STMicroelectronics STTH9012TV1 is an isolated Switching Diode designed to handle high current and voltage levels in demanding semiconductor applications. It supports a maximum forward current of 90 amperes and a maximum peak reverse repetitive voltage of 1200 volts, making it ideal for power rectification and switching tasks in various electronic circuits.
This diode is packaged in a surface mount ISOTOP 4-pin configuration, providing efficient heat dissipation and easy PCB integration. Its silicon junction construction ensures reliable electrical performance and durability in industrial environments.
Operating within a wide temperature range of -65°C to 150°C, the STTH9012TV1 can be deployed in harsh conditions, typical of automotive, industrial, and power management systems. The device's fast peak reverse recovery time of 50 nanoseconds minimizes switching losses, enhancing efficiency in high-frequency power applications.
Typical applications include rectification in power supplies, inverter circuits, and as a robust component in automotive electronics. The 420A peak non-repetitive forward surge current capability allows the diode to handle transient overloads without damage, ensuring long-term reliability.
Provides a maximum forward current of 90 amperes. Features a maximum peak reverse repetitive voltage of 1200 volts. Constructed with a silicon junction in an isolated ISOTOP 4-pin surface mount package. Capable of operating in temperature ranges from -65°C to 150°C.
Exhibits a peak non-repetitive forward surge current rating of 420 amperes. Offers a fast peak reverse recovery time of 50 nanoseconds. Maximum forward voltage drop is 1.9 volts. Compact dimensions of 38.2mm length, 25.5mm width, and 12.2mm height.
Designed for industrial, automotive, and power electronics applications.
This diode supports efficient power conversion and protection tasks in semiconductors and power electronics. It is a versatile component suitable for use in industrial automation, automotive electronics, and renewable energy systems.
Discover more high-performance semiconductor components by exploring our Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum forward current of this model is 90 amperes.
It features a maximum peak reverse repetitive voltage of 1200 volts.
This diode is packaged in an ISOTOP 4-pin surface mount configuration.
It can operate within a temperature range from -65°C to 150°C.
The peak non-repetitive forward surge current rating is 420 amperes.
It exhibits a fast peak reverse recovery time of 50 nanoseconds.
The dimensions are 38.2mm in length, 25.5mm in width, and 12.2mm in height.
The maximum forward voltage drop is 1.9 volts.
It is suitable for applications such as power rectification, inverter circuits, and automotive electronics.
It is constructed with a silicon junction.
This model has a pin count of 4.
The country of origin for this diode is India.
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