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| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3.1mm |
| Model | BC817DPN |
| Width | 3mm |
| Mount Type | Surface |
| Series | BC817DPN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-457 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 600mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 100MHz |
Nexperia BC817DPN is a dual NPN + PNP bipolar transistor designed for electronic applications requiring reliable switching and amplification. Packaged in a compact 6-Pin SOT-457 surface mount format, this transistor supports a maximum collector current of 500 mA and collector-emitter voltage of 45 V, making it suitable for various industrial, automotive electronics, and consumer device circuits.
The isolated transistor configuration provides flexibility for designs combining both polarities within a single device. With a maximum power dissipation of 600 mW and a transition frequency of 100 MHz, the BC817DPN efficiently supports high-speed switching and signal amplification tasks.
Its robust operating temperature range from -65°C to 150°C makes this transistor ideal for demanding environmental conditions, including automotive and industrial applications. Physical dimensions of 3.1 mm length, 3 mm width, and 1.1 mm height enable compact PCB layouts, while the surface mount package eases manufacturing integration.
This product is manufactured in Malaysia under stringent quality controls, ensuring consistent performance and reliability in industrial, laboratory, construction, manufacturing, and electronic circuit applications.
Maximum DC collector current of 500 mA for robust performance. Maximum collector-emitter voltage rated at 45 V. Isolated transistor configuration providing dual polarity. Compact dimensions: length 3.1 mm, width 3 mm, height 1.1 mm.
High transition frequency up to 100 MHz for fast switching applications. Maximum power dissipation of 600 mW. Operating temperature range from -65°C to 150°C. Minimum DC current gain (hFE) of 40 ensuring efficient amplification.
Six-pin surface mount package facilitating easy PCB assembly. Designed and manufactured in Malaysia for quality assurance. Explore more Bipolar Transistors and semiconductor components at EnvMart for your industrial and electronic design needs.
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