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Nexperia Bipolar Transistor PNP 3-Pin SOT-23 -100 mA, -300 V, 250 mW PMBTA92,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBTA92,215
Width 1.4mm
Mount Type Surface
Series PMBTA92
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for surface mount applications providing high voltage handling.
  • Supports a maximum power dissipation of 250 mW.
  • Operating temperature range from -65°C to 150°C ensures reliability in harsh environments.
  • Typical minimum DC current gain of 40 for effective signal amplification.
  • Compact SOT-23 package with dimensions 3 mm length and 1.4 mm width.
  • Automotive standard AEC-Q101 compliant for enhanced quality assurance.
  • Maximum transition frequency of 100 MHz, suitable for high frequency circuits.

Product Description

Nexperia PMBTA92,215 Bipolar Transistor is a PNP type transistor housed in a 3-Pin SOT-23 surface mount package. This transistor features a maximum DC collector current of -100 mA and a maximum collector-emitter voltage of -300 V, making it suitable for high voltage applications in industrial, automotive, and electronic circuit designs.

The device operates efficiently within a wide temperature range from -65°C to 150°C, providing robust performance under demanding conditions. It supports a maximum power dissipation of 250 mW and a minimum DC current gain (hFE) of 40, offering reliable amplification characteristics.

With a compact and industry-standard SOT-23 footprint measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height, it is optimized for space-constrained PCB layouts. Its maximum transition frequency of 100 MHz enables use in moderate frequency switching and amplification circuits.

This transistor meets the AEC-Q101 automotive standard, underscoring its suitability for automotive electronic systems requiring elevated reliability and quality standards. Designed for surface mount applications providing high voltage handling.

Supports a maximum power dissipation of 250 mW. Operating temperature range from -65°C to 150°C ensures reliability in harsh environments. Typical minimum DC current gain of 40 for effective signal amplification. Compact SOT-23 package with dimensions 3 mm length and 1.4 mm width.

Automotive standard AEC-Q101 compliant for enhanced quality assurance. Maximum transition frequency of 100 MHz, suitable for high frequency circuits.

This bipolar transistor is ideal for applications including industrial controls, automotive electronics, signal amplification, and power switching circuits. It offers efficient performance for circuit designers seeking reliable, high-voltage PNP transistor components.

Explore additional semiconductor components and Bipolar Transistors at EnvMart for comprehensive electronic solutions.

Nexperia Bipolar Transistor PNP 3-Pin SOT-23 -100 mA, -300 V, 250 mW PMBTA92,215
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for the PMBTA92,215 is -300 V.

It supports a maximum power dissipation of 250 mW.

The operating temperature range for the PMBTA92,215 is from -65°C to 150°C.

The typical minimum DC current gain (hFE) is 40, which is effective for signal amplification.

The SOT-23 package has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

Yes, it meets the AEC-Q101 automotive standard for enhanced quality assurance.

The maximum DC collector current (Idc) is -100 mA.

The maximum transition frequency (ft) is 100 MHz, making it suitable for moderate frequency applications.

It is designed for surface mount applications.

The maximum emitter-base voltage (VEBO) is -5 V.

This model is a PNP type transistor.

It complies with RoHS standards, ensuring it meets environmental regulations.

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