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Nexperia Low Saturation Voltage NPN Transistor 3-Pin SOT-23, 3.8 A, 60 V PBSS4041NT,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS4041NT,215
Width 2.5mm
Mount Type Surface
Series PBSS4041NT
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.1W
Maximum DC Collector Current Idc 3.8A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of 3.8 amperes.
  • Maximum collector-emitter voltage of 60 volts suitable for various switching applications.
  • Surface mount SOT-23 package with compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.
  • High transition frequency of 100 MHz for fast switching performance.
  • Operates reliably within temperature range of -65°C to 150°C.
  • Offers a minimum DC current gain (hFE) of 30, ensuring good amplification.
  • Complies with RoHS standards and meets AEC-Q101 automotive qualification.
  • Designed for low saturation voltage resulting in reduced heat and increased efficiency.

Product Description

The Nexperia PBSS4041NT,215 is a low saturation voltage NPN bipolar junction transistor housed in a compact 3-pin SOT-23 surface mount package measuring 3 x 2.5 x 1.1 mm. It is engineered for efficient switching and digital applications requiring minimal losses due to its low collector-emitter saturation voltage.

With a maximum DC collector current of 3.8 A and a maximum collector-emitter voltage of 60 V, this transistor supports medium-power loads offering robustness in compact form factors. The transistor features a high transition frequency of 100 MHz, enabling rapid switching cycles suited for high-frequency electronic circuits.

The device operates over a wide temperature range from -65°C minimum to 150°C maximum, ensuring reliability in demanding industrial or automotive environments. It carries an automotive standard qualification of AEC-Q101, underscoring its suitability for automotive electronics.

This transistor’s minimum DC current gain (hFE) of 30 guarantees adequate amplification for signal and switching purposes. The maximum power dissipation is rated at 1.1 watts, balancing performance and thermal management in small footprint devices.

Its package design facilitates easy mounting on printed circuit boards, enhancing manufacturing efficiency for consumer, industrial, and automotive electronics. Supports a maximum DC collector current of 3.8 amperes. Maximum collector-emitter voltage of 60 volts.

Compact SOT-23 surface mount package dimensions of 3 mm x 2.5 mm x 1.1 mm. High transition frequency of 100 MHz for fast switching. Operational temperature range from -65°C to 150°C. Minimum DC current gain hFE of 30. Complies with RoHS directives and qualified to AEC-Q101 automotive standards.

Low saturation voltage design reduces heat generation and increases efficiency.

This transistor is ideal for industrial, automotive, and consumer electronic applications requiring efficient switching with robust current handling in space-constrained designs. Explore more Bipolar Transistors and semiconductor solutions at EnvMart to find components tailored for your engineering needs.

Nexperia Low Saturation Voltage NPN Transistor 3-Pin SOT-23, 3.8 A, 60 V PBSS4041NT,215
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Frequently Asked Questions

The maximum DC collector current for this model is 3.8 amperes.

It supports a maximum collector-emitter voltage of 60 volts.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

This transistor features a high transition frequency of 100 MHz, enabling fast switching performance.

It operates reliably within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) is 30, ensuring adequate amplification.

It complies with the AEC-Q101 automotive qualification standard.

The maximum power dissipation for this model is rated at 1.1 watts.

This is an NPN bipolar junction transistor designed for efficient switching applications.

The maximum emitter-base voltage (VEBO) is 5V, and the maximum collector-base voltage (VCBO) is 60V.

This model features a surface mount design, facilitating easy integration into printed circuit boards.

Yes, this transistor complies with RoHS standards.

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