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Nexperia Low Saturation Voltage NPN Bipolar Transistor 1 A, 100 V, 3-Pin SOT-89 PBSS8110X,135

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Hong Kong
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model PBSS8110X,135
Width 2.6mm
Mount Type Surface
Series PBSS8110X
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi Transistor, 2 A NPN, 100 V, 4-Pin SOT-223Brand onsemi

Key Features

  • Supports maximum DC collector current of 1 A.
  • Maximum collector-emitter voltage of 100 V ensures high voltage operation.
  • Compact 3-pin SOT-89 surface mount package allows space-saving PCB layouts.
  • High minimum DC current gain (hFE) of 80 improves signal amplification.
  • Maximum power dissipation of 2 W facilitates moderate power applications.
  • Operating temperature range from -65°C to 150°C ensures reliability under harsh conditions.
  • Maximum transition frequency of 100 MHz suitable for high-frequency applications.
  • Low emitter-base voltage of 5 V protects device integrity.

Product Description

Nexperia PBSS8110X,135 low saturation voltage NPN bipolar transistor is engineered to deliver reliable switching and amplification in electronic circuits requiring up to 1 A collector current and 100 V collector-emitter voltage. Packaged in a compact 3-pin SOT-89 surface mount form factor, this transistor features low collector-emitter saturation voltage, enhancing energy efficiency and reducing heat generation in switching applications.

The device supports a maximum power dissipation of 2 watts and a minimum DC current gain (hFE) of 80, ensuring effective amplification performance. Its wide operating temperature range from -65°C to 150°C makes it suitable for demanding industrial and commercial environments.

With a maximum transition frequency (ft) of 100 MHz, it is suitable for high-frequency signal processing and switching tasks. Physical dimensions measure approximately 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height, allowing for compact PCB designs. The maximum emitter-base voltage rating is 5 V, providing device protection during operation.

This transistor is widely used in industrial electronics, communication equipment, power management, and embedded systems where low voltage drop and high efficiency are critical. Its small footprint and surface mount capability enable efficient manufacturing processes.

Supports maximum DC collector current of 1 A. Maximum collector-emitter voltage of 100 V ensures high voltage operation. Compact 3-pin SOT-89 surface mount package allows space-saving PCB layouts. High minimum DC current gain (hFE) of 80 improves signal amplification.

Maximum power dissipation of 2 W facilitates moderate power applications. Operating temperature range from -65°C to 150°C ensures reliability under harsh conditions. Maximum transition frequency of 100 MHz suitable for high-frequency applications.

Low emitter-base voltage of 5 V protects device integrity. Dimensions approximately 4.6 mm length, 2.6 mm width, and 1.6 mm height for precise PCB footprint. Designed primarily for switching and digital applications with reduced losses and heat generation.

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Nexperia Low Saturation Voltage NPN Bipolar Transistor 1 A, 100 V, 3-Pin SOT-89 PBSS8110X,135
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Frequently Asked Questions

The maximum DC collector current for this model is 1 A.

This transistor has a maximum collector-emitter voltage rating of 100 V.

It is packaged in a compact 3-pin SOT-89 surface mount form factor.

The minimum DC current gain (hFE) is 80, which enhances signal amplification.

It supports a maximum power dissipation of 2 W.

The operating temperature range is from -65°C to 150°C.

The maximum transition frequency is 100 MHz, suitable for high-frequency applications.

The dimensions are approximately 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.

The maximum emitter-base voltage rating is 5 V, which protects device integrity during operation.

It is widely used in industrial electronics, communication equipment, power management, and embedded systems.

This model has a pin count of 3.

It is an NPN bipolar transistor designed for reliable switching and amplification.

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