Nexperia PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage -45 V, 3-Pin BC857CW,115

Nexperia BC857CW,115 PNP Transistor is a compact, small signal bipolar transistor designed for use in electronic circuits requiring reliable switching and amplification. Packaged in a 3-pin SOT-323 surface mount package, this device supports maximum collector current of -100 mA and collector-emitter voltage rating of -45 V. It offers high current gain with a minimum DC current gain (hFE) of 420, making it suitable for sensitive signal amplification and switching applications.

This transistor is engineered to operate efficiently over a wide temperature range from -65°C to 150°C, enhancing its versatility in various industrial, commercial, and consumer electronics environments. The maximum power dissipation of 200 mW makes it ideal for low power circuits and compact PCB layouts.

With standardized dimensions of 2.2 mm length, 2.2 mm width, and 1.1 mm height, the SOT-323 package is optimized for surface mounting on PCB assemblies, enabling automated mass production processes. Additional ratings include a maximum collector-base voltage of 50 V and emitter-base voltage of 5 V, enabling robust operation in transistor-based amplifiers and switching circuits.

This transistor is manufactured in Malaysia, ensuring consistent manufacturing quality. It is widely used in applications across telecommunications, automotive electronics, instrumentation, and consumer devices requiring signal processing or driver stages.

Maximum collector current of -100 mA ensures reliable switching performance. Voltage rating up to -45 V between collector and emitter. Compact SOT-323 surface mount package suitable for space-constrained designs. High DC current gain minimum of 420 enhances amplification efficiency.

Wide operating temperature range from -65°C to 150°C for versatile environments. Maximum power dissipation of 200 mW supports low power circuits. Single transistor configuration with 3 pins for easy integration. Maximum collector-base voltage of 50 V and emitter-base voltage of 5 V.

Dimensions approximately 2.2 mm length, 2.2 mm width, and 1.1 mm height. Manufactured in Malaysia ensuring quality and reliability. Explore more Nexperia Bipolar Transistors on EnvMart for reliable semiconductor components tailored to your engineering needs.