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DiodesZetex Single Silicon Junction Switching Diode 300 mA, 75 V, SOT-23 Package MMBD914-7-F

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DiodesZetex Single Silicon Junction Switching Diode 300 mA, 75 V, SOT-23 Package MMBD914-7-F

Name: DiodesZetex Single Silicon Junction Switching Diode 300 mA, 75 V, SOT-23 Package MMBD914-7-F
Brand: DiodesZetex
SKU: 127650
Price: 0.05 USD
Availability: InStock

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Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	MMBD914-7-F
Width	2.5mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	350mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	300mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V

Key Features

This diode features a 3-pin SOT-23 surface mount package for compact PCB integration.
It has a maximum power dissipation rating of 350 mW suitable for small signal applications.
The diode offers a peak reverse recovery time of 4 nanoseconds for fast switching.
Operating temperature ranges from -65°C to 150°C, ensuring reliability over wide thermal conditions.
The maximum forward voltage drop is 1.25 V ensuring efficient conduction with minimal losses.
It can withstand a peak non-repetitive forward surge current of 2 A, suitable for transient events.
The compact dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, ideal for space-constrained designs.
It is a new, standard component with no automotive or industry-specific certifications.

Product Description

DiodesZetex MMBD914-7-F is a single silicon junction switching diode designed for efficient switching applications requiring a maximum continuous forward current of 300 mA and a peak repetitive reverse voltage of 75 V. Housed in a small 3-pin SOT-23 surface mount package, this diode offers a compact footprint making it ideal for modern PCB layouts.

With a maximum power dissipation of 350 mW, the diode can reliably handle typical low power switching tasks in various electronic devices. Its peak reverse recovery time of 4 ns enables fast switching capabilities minimizing losses in high-speed circuits.

The diode is engineered to operate safely within a minimum temperature of -65°C and up to a maximum of 150°C, ensuring stable operation in diverse environmental conditions. The maximum forward voltage drop is 1.25 V, which contributes to efficient conduction with minimal power loss during operation.

The device can sustain peak non-repetitive forward surge currents of up to 2 A, providing robustness against transient current spikes common in switching environments. Its physical package dimensions measure 3 mm in length, 2.5 mm in width, and 1.1 mm in height. This shape is compatible with high-density electronic assemblies and automated pick-and-place manufacturing.

There are no specific compliance or automotive standards attributed to this diode, making it a versatile component for general switching diode applications in industrial, consumer electronics, and power management circuits.

Single silicon junction Switching Diode. Maximum forward current of 300 mA. Peak reverse voltage rating of 75 V. SOT-23 3-pin surface mount package. Maximum power dissipation of 350 mW. Peak reverse recovery time of 4 nanoseconds.

Operating temperature range from -65°C to 150°C. Maximum forward voltage of 1.25 V. Peak non-repetitive forward surge current of 2 A. Compact dimensions 3 mm x 2.5 mm x 1.1 mm.

This diode is suitable for applications in industrial, electronic component manufacturing, power supplies, and switching circuits. For a wide range of semiconductor and diode products, explore the Electronics & Electricals category at EnvMart.