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Nexperia Small Signal PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage BC859CW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 0.95mm
Length 2.2mm
Model BC859CW,115
Width 1.35mm
Mount Type Surface
Series BC859W
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC858BWT1G Transistor, -100 mA PNP, -30 V, 3-Pin SOT-323Brand onsemi

Key Features

  • Maximum DC collector current of -100 mA ensures efficient signal amplification.
  • Maximum collector emitter voltage of -30 V supports stable operation.
  • Surface mount type with compact 3-pin UMT package for easy PCB integration.
  • High minimum DC current gain (hFE) of 220 for enhanced performance.
  • Operates reliably across a wide temperature range from -65°C to 150°C.
  • Complies with RoHS and AEC-Q101 automotive standards ensuring quality and safety.
  • Maximum power dissipation rating of 200 mW suitable for small signal applications.
  • Maximum transition frequency of 100 MHz for high-speed switching.

Product Description

Nexperia BC859CW,115 small signal PNP transistor is suitable for electronic circuits requiring low current and voltage operation. It features a compact 3-pin UMT surface mount package, allowing for efficient PCB layout in modern electronics design.

This transistor offers a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -30 V. It supports a minimum DC current gain of 220, ensuring effective amplification capabilities in analog signal applications.

The device operates reliably within an ambient temperature range of -65°C to 150°C making it ideal for use in automotive and industrial environments, supported by the AEC-Q101 qualification. Its RoHS compliance guarantees environmentally responsible manufacturing.

Designed for high-frequency applications, the transistor has a maximum transition frequency (ft) of 100 MHz and a maximum power dissipation of 200 mW. The transistor polarity is PNP with a single transistor configuration, featuring 3 pins in total.

Physical dimensions are compact, with height 0.95 mm, length 2.2 mm, and width 1.35 mm, optimized for surface mount technology. Maximum DC collector current of -100 mA for efficient signal processing. Compact 3-pin UMT package supports surface mounting on PCBs.

Wide operating temperature range ensures stability under harsh conditions. Compliance with automotive and RoHS standards for high reliability. High transition frequency suited for fast switching applications. This transistor is widely used in industrial, automotive, communications, and consumer electronic devices where space-efficient, reliable small signal amplification is required.

Explore the range of high-quality Nexperia semiconductors and Bipolar Transistors at EnvMart for your design and manufacturing needs.

Nexperia Small Signal PNP Transistor, Maximum DC Collector Current -100 mA, Maximum Collector Emitter Voltage BC859CW,115
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Frequently Asked Questions

The maximum DC collector current for this transistor is -100 mA, which ensures efficient signal amplification.

The maximum collector emitter voltage (Vceo) for the BC859CW,115 is -30 V, supporting stable operation in various applications.

The minimum DC current gain (hFE) for the BC859CW,115 is 220, enhancing its performance in signal amplification.

This transistor has a height of 0.95 mm, a length of 2.2 mm, and a width of 1.35 mm, making it compact for surface mount applications.

The maximum power dissipation rating for the BC859CW,115 is 200 mW, suitable for small signal applications.

This transistor operates reliably across a wide temperature range from -65°C to 150°C, making it suitable for various environments.

The BC859CW,115 comes in a compact 3-pin UMT surface mount package, designed for easy PCB integration.

This model complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.

The maximum transition frequency (ft) of this transistor is 100 MHz, making it suitable for high-speed switching applications.

The BC859CW,115 complies with RoHS standards, ensuring environmentally responsible manufacturing.

The BC859CW,115 features a single transistor configuration with a PNP polarity.

The maximum emitter base voltage (VEBO) for the BC859CW,115 is 5 V, which is important for its operation in electronic circuits.

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