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ams OSRAM Infrared Photodiode, ±60 ° Angle of Half Sensitivity, Surface DIP Package SFH 2400 FA-Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | ams OSRAM |
| Height | 1.05mm |
| Length | 2.1mm |
| Model | SFH 2400 FA-Z |
| Packaging | Tape & Reel |
| Width | 1mm |
| Mount Type | Surface |
| Series | SFH |
| Short Circuit Current | 6μA |
| Maximum Operating Temperature | 100°C |
| Package Type | DIP |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Dark Current | 1nA |
| Open Circuit Voltage | 320mV |
| Standards/Approvals | JEDEC J-STD-020D.01 |
| Number of Pins | 3 |
| Typical Fall Time | 0.005μs |
| Wavelength of Peak Sensitivity | 900nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 20V |
| Minimum Wavelength Detected | 750nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | ±60 ° |
Key Features
- This photodiode detects infrared spectra with a peak wavelength of 900nm.
- It is housed in a durable DIP package suitable for surface mounting.
- The device supports a wavelength detection range from 750nm to 1100nm.
- It features a radiant sensitive area of 1 x 1 mm² for accurate photodetection.
- Typical rise and fall times are both 0.005 microseconds, allowing fast response.
- Operating temperature ranges from -40°C to 100°C for reliability in harsh environments.
- Breakdown voltage is rated at 20V with an open circuit voltage of 320mV.
- The photodiode is forward polarity with a short circuit current of 6 microamperes and dark current of 1 nanoampere.
Product Description
ams OSRAM SFH 2400 FA-Z is a high-performance infrared photodiode designed for precise detection of infrared light within the 750nm to 1100nm wavelength range. Featuring a ±60 ° angle of half sensitivity, this device delivers reliable photodetection in industrial electronics, automotive applications like rain sensors and headsets, and photointerrupter systems.
This photodiode is packaged in a surface-mount Smart DIL DIP housing with a compact radiant sensitive area of 1 x 1 mm², supporting efficient surface DIP mounting. Its fast response times - typical rise and fall times of 0.005 microseconds - make it well suited for high-speed sensing tasks.
The SFH 2400 FA-Z operates safely across a broad temperature range from -40°C up to 100°C, ensuring consistent functionality in harsh conditions. It features a breakdown voltage of 20V, an open circuit voltage of 320mV, and a very low dark current of 1 nanoampere for minimal noise interference.
Complying with JEDEC J-STD-020D.01 standards, this photodiode guarantees industry-grade reliability and quality. Supplied on tape and reel packaging, it is optimized for automated insertion processes, enhancing manufacturing efficiency.
Common use cases include industrial electronics, automotive sensing, and optoelectronic systems where precise infrared detection is critical. This ams OSRAM photodiode series offers dependable performance for demanding electronic component applications.
Infrared spectrum detection between 750nm and 1100nm wavelengths. ±60 ° angle of half sensitivity for comprehensive light capture. Compact 1 x 1 mm² radiant sensitive area. Fast typical rise and fall times of 0.005 microseconds.
Robust operating temperature range from -40°C to 100°C. Forward polarity with low dark current of 1 nanoampere. JEDEC J-STD-020D.01 certified for high reliability. Surface DIP package optimized for automated manufacturing.
Explore the ams OSRAM range and other premium Photodiodes and optoelectronic components on EnvMart for industrial and electronic design projects.
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Frequently Asked Questions
This photodiode detects infrared light within a wavelength range from 750nm to 1100nm, with a peak sensitivity at 900nm.
The typical rise and fall times for this model are both 0.005 microseconds, allowing for fast response in sensing applications.
This photodiode is housed in a surface mount DIP package, specifically designed for efficient surface mounting.
The dark current for this model is rated at 1 nanoampere, which helps minimize noise interference.
The breakdown voltage for this photodiode is rated at 20V, ensuring safe operation under specified conditions.
It is supplied on tape and reel packaging, which is optimized for automated insertion processes in manufacturing.
The radiant sensitive area of this photodiode measures 1 x 1 mm², allowing for accurate photodetection.
The open circuit voltage for this model is rated at 320mV, which is important for its operational characteristics.
It complies with JEDEC J-STD-020D.01 standards, ensuring industry-grade reliability and quality.
This photodiode features forward polarity, which is essential for its operation in electronic circuits.
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