Nexperia Darlington Transistor NPN 1 A 80 V, 4-Pin UPAK BST52,115

Nexperia BST52,115 Darlington Transistor NPN is engineered for electronic applications requiring reliable high-gain switching and amplification with a maximum continuous collector current of 1 Amp and collector-emitter voltage rating of 80 Volts.

The device is housed in a 4-pin UPAK surface mount package, measuring 1.6 mm in height and 4.6 mm in length, facilitating compact PCB layouts. This transistor provides a minimum DC gain (hFE) of 1000, enabling effective current amplification in discrete semiconductor circuits.

Operational temperature range is broad from -65°C up to 150°C, ensuring durability under various environmental conditions. Maximum power dissipation is 1.3 Watts, balancing performance and thermal restrictions in embedded systems or power switching modules.

The NPN polarity supports a wide range of semiconductor uses, including amplifier stages and switching regulators with low collector saturation voltage of 1.3 Volts ensuring efficient conduction.

Rated for 1 Amp continuous collector current and 80 Volt Vceo voltage. Minimum DC current gain of 1000 for strong amplification. Surface mount 4-pin UPAK package enables compact assembly. Operating temperature span from -65°C to 150°C.

Maximum power dissipation of 1.3 Watts for robust performance. Low saturation voltage of 1.3 Volts for energy-efficient switching. Dimensions: 1.6 mm height, 4.6 mm length. This transistor is widely used in industrial, electronic component design, and manufacturing sectors, ideal for discrete semiconductor circuit requirements.

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