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Infineon Darlington Transistor NPN 500 mA 60 V HFE 2000 3-Pin SOT-23 BCV47E6327HTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BCV47E6327HTSA1 |
| Mount Type | Surface |
| Series | BCV47 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 2000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 0.0001mA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 360mW |
| Infineon BCV47 NPN Darlington Transistor, 500 mA 60 V HFE | 2000, 3-Pin SOT-23Brand: Infineon |
| Infineon BCV47E6327HTSA1 1 Darlington Transistor NPN, 500 mA 60 V HFE | 2000, 3-Pin SOT-23 |
Key Features
- High DC current gain (hFE) of 2000 ensuring amplification efficiency.
- Compact 3-pin SOT-23 package suitable for surface mounting.
- Maximum power dissipation of 360 mW supports reliable operation.
- Wide operating temperature range from -65°C up to 150°C.
- Automotive grade compliant with AEC-Q101 standard.
- Maximum collector cutoff current of 0.0001 mA reduces leakage and losses.
- Designed for discrete semiconductor applications requiring small footprint.
- Robust construction supporting surface mount technology.
Product Description
Infineon BCV47E6327HTSA1 is a NPN Darlington transistor designed for efficient signal amplification and switching in electronic circuits. It features a maximum continuous collector current of 500 mA and a maximum collector-emitter voltage of 60 V, making it suitable for a broad range of low power applications. The transistor delivers a high minimum DC current gain (hFE) of 2000, ensuring strong amplification performance.
Encased in a compact SOT-23 surface mount package with 3 pins, this transistor supports automated assembly in modern electronic manufacturing. Its maximum power dissipation rating is 360 mW, enabling reliable function under moderate power demands.
The device operates across a wide temperature range from -65°C to 150°C, suitable for harsh and variable environmental conditions typically encountered in automotive and industrial electronics. Compliant with the stringent Automotive Standard AEC-Q101, it assures high reliability and quality for automotive applications.
Other key electrical parameters include a maximum emitter-base voltage of 10 V and a maximum collector-base voltage of 80 V. The transistor cutoff current is remarkably low at 0.0001 mA, minimizing leakage current for improved efficiency.
This Darlington transistor is ideal for use in discrete semiconductor circuits that require compact size and dependable performance. Its typical applications include signal amplification, switching tasks, and integration in automotive electronics.
The product is manufactured in accordance with Infineon's quality standards, ensuring long-term durability and consistency. It supports industry standard surface mount technology, enhancing its compatibility with automated PCB assembly lines.
EnvMart offers this Infineon BCV47E6327HTSA1 Darlington Transistor as part of its electronics components category. Suitable for engineers and technical professionals involved in circuit design, prototyping, and production. Explore more Darlington Transistors and discrete semiconductor devices in the EnvMart catalog to find complementary components for your projects.
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Frequently Asked Questions
The maximum continuous collector current for this NPN Darlington transistor is 500 mA.
It comes in a compact SOT-23 surface mount package with 3 pins.
The minimum DC current gain (hFE) is 2000, ensuring strong amplification performance.
The maximum collector-emitter voltage (Vceo) is 60 V.
It operates within a wide temperature range from -65°C to 150°C.
The maximum power dissipation is rated at 360 mW.
This model is compliant with the Automotive Standard AEC-Q101.
The maximum collector cut-off current is 0.0001 mA, which minimizes leakage current.
The maximum emitter-base voltage (VEBO) is 10 V.
It is designed for signal amplification, switching tasks, and integration in automotive electronics.
The dimensions of this transistor are 2.9 mm in length and 1 mm in height.
It is an NPN Darlington transistor, suitable for discrete semiconductor applications.
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