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onsemi NPN Darlington Transistor 4 A 100 V, TO-225 Package, 3-Pin BD681G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 11.04mm |
| Length | 7.74mm |
| Model | BD681G |
| Mount Type | Through Hole |
| Series | BD675 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-225 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| onsemi BD681G 1 Darlington Transistor NPN, 4 A 100 V HFE | 750, 3-Pin TO-225 |
Key Features
- Maximum continuous collector current of 4 A ensures efficient power handling.
- Collector-emitter voltage of 100 V suitable for medium power applications.
- Minimum DC current gain (hFE) of 750 for high amplification.
- Packaged in TO-225 with through hole mount and 3 pins for easy PCB integration.
- Operating temperature range from -55°C to 150°C for reliable performance.
- Maximum emitter base voltage of 5 V and maximum collector cut-off current of 0.2 mA.
- Maximum collector-emitter saturation voltage of 2.5 V reduces power loss.
- Series BD675, transistor polarity is NPN with single element per chip.
Product Description
onsemi BD681G is a high-performance NPN Darlington Transistor designed to handle continuous collector currents up to 4 A and collector-emitter voltages up to 100 V. Packaged in a TO-225 form factor with a 3-pin through-hole mount, it is ideal for medium-power amplification and switching applications.
This transistor features a minimum DC current gain (hFE) of 750, providing strong amplification with low power loss. It operates reliably within a wide temperature range from -55°C to 150°C, ensuring durability in harsh industrial environments.
The maximum collector-emitter saturation voltage is low at 2.5 V, reducing electrical losses and improving efficiency. With an emitter base voltage limit of 5 V and a maximum collector cut-off current of 0.2 mA, it offers precise control in electronic circuits.
Compact dimensions of 11.04 mm height and 7.74 mm length make the BD681G suitable for space-constrained designs in electronic equipment. This transistor belongs to the BD675 series and has a single transistor element with NPN polarity.
Typical applications include amplification in power control, switching circuits, and general-purpose electronics in industrial, electronics manufacturing, and repair sectors. Maximum continuous collector current of 4 A ensures efficient power handling.
Collector-emitter voltage of 100 V suitable for medium power applications. Minimum DC current gain (hFE) of 750 for high amplification. Packaged in TO-225 with through hole mount and 3 pins for easy PCB integration. Operating temperature range from -55°C to 150°C for reliable performance.
Maximum emitter base voltage of 5 V and maximum collector cut-off current of 0.2 mA. Maximum collector-emitter saturation voltage of 2.5 V reduces power loss. Compact dimensions: 11.04 mm height and 7.74 mm length. Series BD675, transistor polarity is NPN with single element per chip.
For exploring more electronic components and semiconductors, browse the Electronics & Electricals category on EnvMart for comprehensive options tailored to industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4 A, ensuring efficient power handling for various applications.
The collector-emitter voltage rating is 100 V, making it suitable for medium power applications.
The minimum DC current gain (hFE) is 750, providing strong amplification capabilities.
This model operates reliably within a temperature range of -55°C to 150°C.
The BD681G is packaged in a TO-225 form factor with a through-hole mount and has 3 pins for easy PCB integration.
The dimensions of this unit are 11.04 mm in height and 7.74 mm in length, making it suitable for space-constrained designs.
The maximum collector-emitter saturation voltage is 2.5 V, which helps reduce power loss during operation.
The maximum emitter base voltage is 5 V, allowing for precise control in electronic circuits.
The maximum collector cut-off current is 0.2 mA, ensuring low leakage in the off state.
This model contains a single element per chip, which is typical for NPN transistors in its class.
The BD681G belongs to the BD675 series of transistors, which are designed for medium power applications.
Typical applications include amplification in power control, switching circuits, and general-purpose electronics in industrial settings.
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