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Nexperia Resistor-Equipped Transistor NPN 100 mA 50 V 3-Pin DFN1412D-3 PDTC124XQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC124XQC-QZ
Mount Type Surface
Series PDTC124X
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Supports up to 100 mA maximum collector current.
  • Rated for a collector-emitter voltage of 50 V.
  • Compact DFN1412D-3 package with side-wettable flanks.
  • Built-in resistors simplify circuit design and reduce component count.
  • Ideal for digital switching and controlling IC inputs applications.
  • Low package height of 0.5 mm suitable for automated optical inspection.
  • Provides an automotive-grade alternative complying with AEC-Q101 standard.
  • Operating temperature range from -55°C to 150°C.

Product Description

The Nexperia PDTC124XQC-QZ is a resistor-equipped NPN bipolar transistor designed for efficient switching applications. Packaged in an ultra-compact DFN1412D-3 leadless surface-mount device with side-wettable flanks, this device supports a maximum DC collector current of 100 mA and can withstand a maximum collector-emitter voltage of 50 V.

This transistor integrates built-in resistors, which simplifies circuit layout by reducing external components and lowering pick-and-place costs. Its low profile package height of 0.5 mm facilitates automatic optical inspection of solder joints, enhancing manufacturing quality assurance.

Conforming to the automotive standard AEC-Q101, the PDTC124XQC-QZ is suitable for automotive applications as well as general digital switching tasks such as controlling integrated circuit inputs and switching loads. It offers a minimum DC current gain (hFE) of 60 and a high transition frequency (ft) of 230 MHz, supporting fast switching performance. The device operates reliably over a wide temperature range from -55°C to 150°C.

This device serves as a cost-saving alternative to the BC857 transistor series, especially beneficial in digital electronic applications requiring compact and integrated components. The package type DFN1412D-3 helps with space saving on printed circuit boards and improved manufacturing efficiency.

Supports up to 100 mA maximum collector current. Collector-emitter voltage rating of 50 V ensures reliable operation. Compact DFN1412D-3 surface mount package with side-wettable flanks. Built-in resistors reduce external component requirements.

Suits automatic optical inspection and high-volume manufacturing. Automotive compliant meeting AEC-Q101 specifications. Wide operating temperature range between -55°C and 150°C. High frequency operation at 230 MHz for fast switching.

Ideal for controlling IC inputs and load switching in digital circuits. Cost-effective alternative to BC857 series transistors in digital applications.

This product is an excellent choice for electronic engineers designing compact, reliable, and cost-efficient digital switching circuits for industrial, automotive, consumer electronics, and manufacturing applications. Explore more Nexperia semiconductor products in the Bipolar Transistors category on EnvMart for your electronic component needs.

Nexperia Resistor-Equipped Transistor NPN 100 mA 50 V 3-Pin DFN1412D-3 PDTC124XQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a collector-emitter voltage rating of 50 V.

This model operates over a temperature range from -55°C to 150°C.

The transistor is packaged in a DFN1412D-3 surface mount package.

The minimum DC current gain (hFE) is 60.

It complies with the AEC-Q101 automotive standard.

The maximum transition frequency (ft) is 230 MHz.

This model is an NPN bipolar transistor.

The DFN1412D-3 package has a low profile height of 0.5 mm, suitable for automated optical inspection.

The built-in resistors simplify circuit design by reducing the number of external components required.

The maximum emitter-base voltage (VEBO) is 10 V.

It is ideal for digital switching and controlling integrated circuit inputs in various electronic applications.

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