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Nexperia Resistor-Equipped Transistor Dual NPN + PNP 100 mA 50 V 6-Pin SOT PUMD18,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 0.95mm
Length 2.1mm
Model PUMD18,115
Width 1.25mm
Mount Type Surface
Series PUMD18
Maximum Operating Temperature 150°C
Package Type SOT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Dual
Maximum Transition Frequency ft 230MHz

Key Features

  • This transistor is designed with integrated resistors to simplify circuit design.
  • Supports a maximum DC collector current of 100 mA.
  • Maximum collector emitter voltage rating of 50 V ensures reliable operation.
  • Comes in a compact 6-pin SOT surface mount package.
  • Features both NPN and PNP transistor polarity for versatile applications.
  • Offers a minimum DC current gain (hFE) of 50 for efficient amplification.
  • Can operate in temperatures ranging from -65°C to 150°C.
  • Maximum power dissipation capability is 300 mW.

Product Description

Nexperia PUMD18,115 is a dual resistor-equipped transistor integrating both NPN and PNP types in a 6-pin SOT surface mount package. This device supports a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 50 V, making it suitable for compact and efficient circuit designs.

The integrated bias resistors R1 (4.7 kΩ) and R2 (10 kΩ) enhance functionality by reducing component count and simplifying circuit layout, especially useful in automotive and industrial electronics meeting AEC-Q101 standards.

With a minimum DC current gain (hFE) of 50 and a maximum transition frequency of 230 MHz, the PUMD18,115 transistor offers reliable amplification performance in demanding applications.

Designed for surface mount technology, it features a small form factor with 2.1 mm length, 1.25 mm width, and 0.95 mm height, allowing space-saving solutions on circuit boards. Operating temperature range from -65°C to 150°C ensures dependable performance in harsh environmental conditions.

Simplified circuit design with integrated resistors. High current capability of 100 mA. Compact 6-pin SOT package for surface mounting. RoHS compliant and AEC-Q101 automotive qualified. Wide operating temperature range and reliable power dissipation.

Suitable for automotive, industrial, and consumer electronics. Originating from Malaysia, this transistor serves as a versatile component in semiconductor applications, providing dual NPN and PNP transistor configurations in a single package.

Browse EnvMart’s wide range of semiconductor components and Bipolar Transistors for more options and technical support.

Nexperia Resistor-Equipped Transistor Dual NPN + PNP 100 mA 50 V 6-Pin SOT PUMD18,115
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

This transistor has a maximum collector-emitter voltage rating of 50 V.

The dimensions of this unit are 2.1 mm in length, 1.25 mm in width, and 0.95 mm in height.

The minimum DC current gain (hFE) for this model is 50.

It can operate in temperatures ranging from -65°C to 150°C.

This transistor is packaged in a compact 6-pin SOT surface mount package.

The PUMD18,115 is compliant with the AEC-Q101 automotive standard.

The maximum power dissipation capability is 300 mW.

The maximum transition frequency for this transistor is 230 MHz.

Yes, it features integrated bias resistors R1 (4.7 kΩ) and R2 (10 kΩ) to simplify circuit design.

This model includes both NPN and PNP transistor types in a dual configuration.

The country of origin for this transistor is Malaysia.

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