Infineon Single IGBT Module 825 A 3300 V AG-IHVB130 FZ825R33HE4DBPSA1

Infineon FZ825R33HE4DBPSA1 Single IGBT Module is engineered for high-power electronic applications requiring efficient switching and high current handling capability. Featuring the advanced TRENCHSTOP™ IGBT4 technology combined with an Emitter Controlled 4 diode, this module delivers exceptional performance with increased power density supported by an AlSiC base plate that enhances thermal cycling resistance.

With a maximum continuous collector current of 825 A and a maximum collector emitter voltage of 3300 V, the module ensures robust electrical characteristics for demanding industrial, HVAC, manufacturing, and power electronics applications. It operates within a wide temperature range from -40°C to 150°C, making it suitable for harsh environments.

The maximum power dissipation capacity of 2400 kW underscores its capability to handle significant power loads safely, while the maximum gate emitter voltage tolerance of ±20 V ensures operational safety. Its compact dimensions, measuring 109.9 mm in length and 16.4 mm in height, facilitate integration into tight spaces without compromising performance.

Designed to maintain a low collector emitter saturation voltage of 2.65 V, the module minimizes energy losses, boosting system efficiency. Compliance with standards 60749, 60068, and IEC 60747 guarantees quality and reliability for professional applications.

Equipped with TRENCHSTOP™ IGBT4 technology and an Emitter Controlled 4 diode. Compact AG-IHVB130 package architecture for dense power delivery. High continuous current and voltage ratings support demanding industrial use.

Wide operational temperature range for flexible environmental conditions. High maximum power dissipation suitable for heavy-duty applications. Standard compliance ensures operational reliability and safety. Compact design facilitates integration into various systems.

Low saturation voltage reduces power loss enhancing efficiency. Suitable for industrial automation, power control, and electronic switching tasks. AlSiC base plate provides enhanced thermal cycling durability.

This module is ideal for industrial machinery, power converters, renewable energy systems, and other electronic applications demanding reliable high power semiconductor devices. Choose Infineon’s FZ825R33HE4DBPSA1 for consistent, high-performance power switching.

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