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ROHM Bipolar Transistor 150A 50V 3-Pin SOT-416FL 2SC4617EBTLQ

Category Bipolar Transistors Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 0.85mm
Length 1.7mm
Model 2SC4617EBTLQ
Width 0.96mm
Mount Type Surface
Series 2SC4617EB
Maximum Operating Temperature 150°C
Package Type SOT-416FL
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 120
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 150A

Key Features

  • Features 150A maximum DC collector current for high-performance operation.
  • Supports up to 50V collector-emitter voltage for versatile electronics projects.
  • Compact SOT-416FL surface-mount package enables efficient PCB design.
  • Offers a minimum DC current gain (hFE) of 120 for reliable signal amplification.
  • Maximum power dissipation of 200mW suitable for low-power designs.
  • Withstands collector-base voltages up to 60V and emitter-base up to 7V.
  • Operates in temperature ranges from -55°C to 150°C for robust performance.

Product Description

ROHM 2SC4617EBTLQ Bipolar Transistor is a high-quality, general purpose small signal transistor, engineered to deliver reliable performance in industrial and electronic applications. With a maximum collector current of 150A and a collector-emitter voltage rating of 50V, it is well-suited for demanding small-signal amplification and switching tasks.

The device is housed in a compact SOT-416FL surface-mount package, which helps designers achieve space-efficient PCB layouts. The minimum DC current gain (hFE) of 120 ensures effective signal amplification, making it ideal for precision circuits in professional and laboratory environments.

Power dissipation of up to 200mW allows for integration in low-power designs without compromising thermal management. Its tolerance for collector-base voltages up to 60V and emitter-base voltages up to 7V broadens application flexibility, from signal processing modules to automotive and industrial control boards.

Features 150A maximum DC collector current for high-performance operation. Supports up to 50V collector-emitter voltage for versatile electronics projects. Compact SOT-416FL surface-mount package enables efficient PCB design.

Offers a minimum DC current gain (hFE) of 120 for reliable signal amplification. Maximum power dissipation of 200mW suitable for low-power designs. Withstands collector-base voltages up to 60V and emitter-base up to 7V. Operates in temperature ranges from -55°C to 150°C for robust performance.

Operating within a wide temperature range of -55°C to 150°C, ROHM 2SC4617EBTLQ maintains stable electrical characteristics in harsh environments. Its 3-pin configuration simplifies mounting and circuit integration, suitable for assembly line operations and prototyping stages.

Industrial, laboratory, manufacturing, commercial, and automotive sectors benefit from the transistor's rugged build, broad application scope, and consistent performance standards.

Explore further transistor options and related ROHM products in the Bipolar Transistors category on EnvMart.

ROHM Bipolar Transistor 150A 50V 3-Pin SOT-416FL 2SC4617EBTLQ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 150A, allowing for high-performance operation in various applications.

This model supports up to 50V collector-emitter voltage, making it suitable for versatile electronics projects.

It is housed in a compact SOT-416FL surface-mount package, which facilitates efficient PCB design.

The minimum DC current gain (hFE) is 120, ensuring reliable signal amplification for precision circuits.

The maximum power dissipation is 200mW, which is suitable for low-power designs without compromising thermal management.

It operates within a temperature range of -55°C to 150°C, maintaining stable electrical characteristics in harsh environments.

This model can withstand collector-base voltages up to 60V, providing flexibility for various applications.

The maximum emitter-base voltage for this transistor is 7V, which broadens its application scope.

The dimensions are 1.7mm in length, 0.96mm in width, and 0.85mm in height.

This model features a 3-pin configuration, simplifying mounting and circuit integration.

It is well-suited for small-signal amplification and switching tasks in industrial, laboratory, and automotive applications.

The country of origin for this transistor is India.

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