ROHM RSR010N10 N-Channel MOSFET 1A 100V Enhancement 3-Pin SC-96 Surface Mount RQ5P010SNTL

ROHM RQ5P010SNTL is a high-quality N-Channel MOSFET designed for power and switching applications in electronic circuits. With a maximum continuous drain current of 1A and an operating drain-source voltage up to 100V, this device is suitable for various high-voltage and medium-power uses, including power supplies, signal switching, and general-purpose amplification.

Engineered with an enhancement mode channel, the MOSFET enables rapid switching and precise control, ensuring operational efficiency for demanding circuit designs. The SC-96 surface mount package with three pins provides a compact and robust form factor, ideal for modern PCB layouts.

This MOSFET delivers a low drain-source resistance of 580mΩ, minimizing power losses and heating during operation. Its surface mount design allows for automated placement as well as reliable mechanical and electrical stability, supporting production efficiency in electronic manufacturing.

Operating reliably through a wide temperature span - from -55°C to 150°C - the RQ5P010SNTL MOSFET is well-suited for environments ranging from laboratory equipment to industrial automation and consumer electronics. It tolerates a gate-source voltage up to 20V, offering flexibility for interfacing with various control circuits.

With a typical gate charge of 3.5nC, the device supports fast switching speeds, contributing to high-frequency applications and power conversion circuits. Its forward voltage is rated at 1.2V, and the maximum power dissipation is 1W, ensuring thermal stability for a range of load conditions.

1A maximum continuous drain current for efficient power handling. 100V maximum drain-source voltage suitable for high-voltage applications. Enhancement mode operation enables easy switching control. 580mΩ drain-source resistance optimizes power efficiency.

SC-96 surface-mount package provides space-saving integration. Reliable operation from -55°C to 150°C ambient temperatures. 3-pin configuration supports streamlined PCB assembly. 20V gate-source voltage tolerance simplifies circuit design.

3.5nC typical gate charge enables rapid switching response. 1W max power dissipation ensures stable operation under load.

This MOSFET is ideal for industrial, laboratory, HVAC, automotive (non-standard), and commercial electronic applications where reliability, compactness, and controllability are essential. Explore more ROHM MOSFETs and semiconductor solutions in EnvMart's electronics & semiconductors category for precision circuit control and robust power management.