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Nexperia Small Signal NPN Transistor BCV61C,215, 100 mA, 30 V, Surface Mount, SOT-143B Package

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.9mm
Model BCV61C,215
Width 1.3mm
Mount Type Surface
Series BCV61
Maximum Operating Temperature 150°C
Package Type SOT-143B
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 4
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 420
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Current Mirror
Maximum Transition Frequency ft 100MHz

Key Features

  • Rated for maximum DC collector current of 100 mA.
  • Supports collector emitter voltage up to 30 V.
  • Compact 4-pin SOT-143B package for space-saving designs.
  • Current mirror transistor configuration with NPN polarity.
  • High minimum DC current gain of 420 for efficient signal amplification.
  • Power dissipation capacity up to 250 mW.
  • Wide operating temperature range from -65°C to 150°C.
  • RoHS compliant for safe and environmentally friendly use.

Product Description

Nexperia BCV61C,215 Small Signal NPN Transistor is engineered for demanding electronic applications that require precise current control and signal amplification. Featuring a maximum DC collector current of 100 mA and a collector emitter voltage rating of 30 V, this transistor is well-suited for low-power and high-density circuit designs.

This device is housed in a compact SOT-143B surface-mount package, allowing integration into PCBs for space-constrained applications. Its current mirror configuration, combined with NPN polarity, offers reliability and versatility for analog and digital circuits.

The BCV61C,215 boasts a high minimum DC current gain (hFE) of 420, enabling efficient signal amplification and robust performance in variable load conditions. Its maximum power dissipation of 250 mW ensures stable operation without excessive heat generation.

With an extended operating temperature range (-65°C to +150°C) and compliance with automotive standard AEC-Q101, this transistor is ideal for automotive, industrial, and consumer electronics. High transition frequency (100 MHz) supports fast switching and effective small-signal processing.

Applications include current mirrors, amplifiers, switching in control lines, signal processing, and low-power interfaces. Electronics engineers value its RoHS compliance and reliability for projects in manufacturing, laboratory instrumentation, and embedded systems design.

Rated for maximum DC collector current of 100 mA. Collector emitter voltage up to 30 V for flexible circuit operation. 4-pin SOT-143B surface-mount packaging for compact PCB layouts. Current mirror transistor configuration with NPN polarity for precise current handling.

High minimum DC current gain of 420 for robust amplification. Maximum power dissipation up to 250 mW for reliable thermal management. Wide operating temperature range from -65°C to 150°C suitable for diverse environments.

RoHS compliant and meets automotive standard AEC-Q101. Explore more components from Nexperia and other Bipolar Transistors in EnvMart’s electronics section.

Nexperia Small Signal NPN Transistor BCV61C,215, 100 mA, 30 V, Surface Mount, SOT-143B Package
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It supports a collector-emitter voltage of up to 30 V.

This transistor is housed in a compact SOT-143B surface-mount package.

The minimum DC current gain (hFE) is 420, which allows for efficient signal amplification.

It has a maximum power dissipation capacity of 250 mW.

The operating temperature range is from -65°C to 150°C.

Yes, it is RoHS compliant, ensuring safe and environmentally friendly use.

It meets the automotive standard AEC-Q101.

The dimensions of the SOT-143B package are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.

The maximum transition frequency is 100 MHz, supporting fast switching and effective small-signal processing.

It uses a current mirror transistor configuration with NPN polarity.

This model is suitable for applications such as current mirrors, amplifiers, and signal processing in low-power interfaces.

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