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ROHM N-Channel MOSFET 4 A 650 V Enhancement Mode 3-Pin TO-252 R6504KND3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 10.4mm |
| Length | 6.4mm |
| Model | R6504KND3TL1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 1.05Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 58W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Features low on-resistance of 1.05 ohms for efficient power handling.
- Supports enhancement mode with a typical gate charge of 15 nC at Vgs.
- Maximum power dissipation is rated at 58 W for reliable operation.
- Operates within a temperature range from -55°C to 150°C.
- Designed for surface mounting with 3 pins in a TO-252 package type.
- Maximum gate-source voltage is 20 V, ensuring robust switching performance.
- Ideal for Power Factor Correction (PFC) and LLC circuit applications.
- Complies with RoHS standards and uses Pb-free plating for environmental safety.
Product Description
The ROHM R6504KND3TL1 is a high-efficiency N-Channel MOSFET designed for high-speed switching applications. With a maximum continuous drain current of 4 A and maximum drain-source voltage of 650 V, this enhancement-mode MOSFET delivers reliable performance while minimizing losses.
Its TO-252 surface mount package with 3 pins facilitates easy integration into circuit designs, saving PCB space while ensuring excellent thermal management. The device features a low on-resistance of 1.05 ohms which helps reduce power dissipation and enhances energy efficiency.
Typical gate charge is 15 nC at Vgs, enabling fast switching speeds essential for improving performance in power supply circuits such as power factor correction (PFC) and LLC resonant converters. The MOSFET supports a maximum power dissipation of 58 W and operates reliably from -55°C to 150°C.
Its electrical characteristics include a maximum gate-source voltage rating of 20 V, making it robust for various demanding industrial and consumer electronic applications.
This device is RoHS compliant and uses Pb-free plating, supporting environmental safety standards. The product is suited for industrial, power electronics, and electronic component manufacturing sectors requiring compact, efficient, and durable MOSFETs.
Low on-resistance reduces conduction losses efficiently. Super junction technology enables ultra-fast switching. Easy parallel use for increased current capacity. Compatible with surface mount assembly techniques. Provides enhanced reliability for power conversion circuits.
Package contents: 1 Pc ROHM R6504KND3TL1 N-Channel MOSFET in TO-252 package. Discover more semiconductors and MOSFET products in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the ROHM R6504KND3TL1 is 4 A.
This model has a maximum drain-source voltage rating of 650 V.
The on-resistance is rated at 1.05 ohms, which helps in reducing power dissipation.
The typical gate charge at Vgs is 15 nC.
The maximum power dissipation is rated at 58 W.
It operates reliably within a temperature range from -55°C to 150°C.
This MOSFET is packaged in a TO-252 surface mount type.
The device features a 3-pin configuration.
The maximum gate-source voltage is rated at 20 V.
It is ideal for applications such as Power Factor Correction (PFC) and LLC circuit applications.
Yes, this device complies with RoHS standards and uses Pb-free plating.
The height of the TO-252 package is 10.4 mm.
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