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onsemi Darlington Transistor PNP 8A 100V TO-252 Surface Mount 3-Pin DPAK MJD127T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD127T4G |
| Mount Type | Surface |
| Series | MJD122 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.01mA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi MJD127T4G 1 Darlington Transistor PNP, 8 A 100 V HFE | 100, 3-Pin DPAK |
Key Features
- Maximum continuous collector current is rated at 8 amperes for reliable power handling.
- Maximum collector-emitter voltage is 100 volts ensuring wide voltage tolerance.
- Package type TO-252 (DPAK) supports surface mounting with 3 pins.
- Minimum DC gain (hFE) of 100 provides high amplification for switching and amplification uses.
- Maximum power dissipation is 20 watts for efficient thermal management.
- Operating temperature range from -65°C to 150°C for versatile industrial applications.
- Maximum emitter-base voltage of 5 volts to protect against exceeding threshold voltage.
- Maximum collector-emitter saturation voltage of 2 volts ensures low losses during conduction.
Product Description
onsemi MJD127T4G is a PNP Darlington transistor optimized for surface mount device (SMD) technology using a TO-252 (DPAK) package with 3-pin configuration. It supports a maximum continuous collector current of 8 amperes and can withstand collector-emitter voltages up to 100 volts. These characteristics make it suitable for power amplification and switching applications in electronic circuits requiring high gain and power handling.
This transistor exhibits a minimum DC current gain (hFE) of 100, ensuring effective signal amplification. It has a maximum power dissipation rating of 20 watts, allowing for reasonable thermal loads during operation. The device operates reliably within a temperature range of -65°C to 150°C, accommodating demanding environments found in automotive and industrial equipment.
The maximum emitter-base voltage is 5 volts, and the maximum collector-emitter saturation voltage is 2 volts, supporting efficient switching and low conduction losses. The compact TO-252 package measures 6.73 mm in length and 2.38 mm in height, enabling tight PCB space utilization.
This unit complies with the automotive AEC-Q101 standard, making it suitable for use in automotive electronics that demand high reliability and quality assurance.
The transistor’s versatility allows deployment in industrial power control, automotive systems, signal amplification, and general-purpose switching circuits requiring high current gain and power handling.
Maximum continuous collector current of 8 A. Collector-emitter voltage rating up to 100 V. TO-252 (DPAK) surface mount package with 3 pins. High DC current gain (hFE) minimum of 100. Power dissipation capability up to 20 W.
Wide operating temperature range: -65°C to 150°C. Emitter-base voltage up to 5 V. Collector-emitter saturation voltage max 2 V. Automotive standard compliant: AEC-Q101. Compact package size: 6.73 mm length, 2.38 mm height.
Environmental and industrial safety requirements are met with this high-quality transistor, offering a reliable solution for engineers and designers working on power electronics, automotive applications, and semiconductor-driven control systems. For more products like this, browse the Darlington Transistor category on EnvMart to find suitable components matching your technical requirements.
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Frequently Asked Questions
The maximum continuous collector current for the MJD127T4G is rated at 8 amperes.
This model can withstand collector-emitter voltages up to 100 volts.
It comes in a TO-252 (DPAK) package with a 3-pin configuration, suitable for surface mounting.
The minimum DC current gain (hFE) is 100, providing high amplification for various applications.
The maximum power dissipation for the MJD127T4G is 20 watts, allowing for efficient thermal management.
It operates reliably within a temperature range of -65°C to 150°C.
The maximum emitter-base voltage for this transistor is 5 volts, which helps protect against exceeding threshold voltage.
The maximum collector-emitter saturation voltage is 2 volts, ensuring low losses during conduction.
Yes, the MJD127T4G complies with the automotive AEC-Q101 standard, ensuring high reliability for automotive applications.
The TO-252 package measures 6.73 mm in length and 2.38 mm in height.
This transistor is suitable for power amplification, switching applications, and general-purpose circuits requiring high current gain.
The maximum collector cut-off current for this model is 0.01 mA.
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