ROHM N-Channel MOSFET, 70 A, 40 V, 3-Pin TO-220 Package, Surface Mount RX3G07CGN

ROHM RX3G07CGN is a high performance N-Channel MOSFET designed for power switching and electronic control circuits requiring up to 70 A continuous drain current and a maximum drain-source voltage of 40 V. The device is housed in a durable TO-220 package suitable for surface mount technology (SMT) assembly, providing reliable mechanical and electrical connections on printed circuit boards.

This MOSFET exhibits low on-resistance of 47 mΩ, minimizing conduction losses and improving efficiency in power management systems. Its typical gate charge of 32 nC ensures swift switching, making it ideal for high-frequency switching applications. With a power dissipation rating of 78 W, the RX3G07CGN can sustain demanding load requirements while maintaining thermal stability.

The device is rated for a wide temperature range from -55°C to 150°C, suitable for use in industrial, automotive, and commercial electronics exposed to varying environmental conditions. Compliance with RoHS and Pb-Free plating standards ensures it meets modern environmental regulations.

This MOSFET’s 3-pin configuration and surface mount type make it compatible with standard industrial and consumer electronic assemblies where space efficiency and reliable performance are paramount.

This MOSFET offers a maximum continuous drain current of 70 A for robust switching applications. The maximum drain-source voltage is rated at 40 V, suitable for low voltage power control. Packaged in a compact TO-220 format with surface mount type for easy PCB integration.

Low on-resistance of 47 mΩ ensures efficient conduction with minimal power loss. Typical gate charge of 32 nC enables fast switching performance with controlled gate drive. Maximum power dissipation is 78 W, allowing operation under demanding load conditions.

Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments. Designed with Pb-Free plating and RoHS compliance for environmental safety. Forward voltage is 1.2 V with a maximum gate-source voltage rating of 20 V.

The MOSFET features a 3-pin configuration optimized for power switching applications.

This product is widely used in electronic design, power supply regulation, automotive control systems, industrial machinery, and HVAC controllers. ROHM’s RX3G07CGN MOSFET delivers reliable performance, high efficiency, and compliance with environmental standards, making it a preferred choice for semiconductor discrete components in demanding electrical engineering applications.

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