Texas Instruments Logic Level Translator Bi-Directional CMOS Voltage Level Translator 8-Pin DSBGA TXS0102YZPR

Texas Instruments TXS0102YZPR is a high-performance bi-directional voltage level translator tailored for electronic circuits requiring CMOS logic family compatibility. Its capability to translate voltage levels across different logic families makes it highly suitable for versatile signal interfacing in industrial, commercial, and laboratory electronic applications.

This translator features an 8-pin DSBGA surface mount package that ensures compact size and easy PCB integration. The device supports a minimum supply voltage of 1.65V and provides an open drain, 3-state output allowing flexible signal handling and low power operation.

Its maximum propagation delay time of 7.5 nanoseconds at capacitive load ensures rapid signal transitions suitable for high-speed digital circuits. Operating temperature range from -40°C to 85°C and its robust construction comply with demanding industrial temperature requirements.

The TXS0102YZPR includes one element per chip and offers a maximum low level output current of 1 mA alongside a maximum high level output current rating of -20 microamperes. The compact package dimensions (length 1.92 mm, width 920 µm, height 310 µm) make it ideal for densely packed circuit designs.

This voltage level translator is useful in applications such as signal interfacing between systems running at different voltages, logic level shifting in mixed-voltage environments, automotive electronic systems, communication equipment, and embedded system designs.

Supports bi-directional voltage level translation with CMOS logic family. Has a maximum propagation delay time of 7.5 nanoseconds at CL. Operates with a minimum supply voltage of 1.65 volts. Features open drain, 3-state output type for flexible interfacing.

Rated for operating temperatures from -40 to 85 degrees Celsius. Compact surface mount DSBGA package measuring 1.92 mm length and 920 microns width. Designed with 8 pins and contains 1 element per chip. Maximum low level output current of 1 mA and maximum high level output current of -20 microamperes.

Height of the device is 310 microns for low-profile applications.

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