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Nexperia Small Signal PNP Bipolar Transistor 100 mA, 30 V, 3-Pin UMT BC859CW,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 0.95mm
Length 2.2mm
Model BC859CW,115
Width 1.35mm
Mount Type Surface
Series BC859W
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -30V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC858BWT1G Transistor, -100 mA PNP, -30 V, 3-Pin SOT-323Brand onsemi
NXP BC859CW PNP Bipolar Transistor, 100 mA, 30 V, 3-Pin UMTBrand NXP

Key Features

  • This small signal PNP transistor offers a maximum power dissipation of 200 mW.
  • It features a minimum DC current gain (hFE) of 220 for reliable amplification.
  • The transistor supports operation in a temperature range from -65°C to 150°C.
  • Designed for surface mount applications with a compact size of 2.2 mm length and 1.35 mm width.
  • Includes automotive standard AEC-Q101 compliance for enhanced reliability.
  • The maximum transition frequency is 100 MHz, suitable for high-frequency applications.

Product Description

Nexperia BC859CW,115 is a small signal PNP bipolar transistor designed for various electronic and industrial applications. It features a maximum DC collector current of 100 mA and can withstand a collector-emitter voltage of 30 V, making it suitable for low power switching and amplification tasks.

Housed in a 3-pin UMT package with surface mount capability, this transistor measures 2.2 mm in length, 1.35 mm in width, and 0.95 mm in height, allowing for compact circuit designs.

The device supports a maximum power dissipation of 200 mW and has a minimum DC current gain (hFE) of 220, ensuring efficient operation in signal amplification circuits. It operates reliably within a temperature range ranging from -65°C to 150°C, suitable for harsh industrial and automotive environments.

Further, the transistor meets the automotive standard AEC-Q101, which guarantees compliance with strict automotive quality and reliability requirements.

This transistor finds use in industrial controls, automotive electronics, communication devices, and general-purpose amplifier circuits. Its maximum transition frequency of 100 MHz supports high-frequency electronic applications.

This transistor offers a robust PNP architecture for small signal applications. It is RoHS compliant, ensuring it meets environmental standards. The compact UMT surface mount package facilitates easy PCB mounting. Operates over a wide temperature range for versatility.

Supports automotive applications with AEC-Q101 certification. Explore more Bipolar Transistors and semiconductor devices through EnvMart for your electronic component needs.

Nexperia Small Signal PNP Bipolar Transistor 100 mA, 30 V, 3-Pin UMT BC859CW,115
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is -30 V.

This model has a maximum power dissipation of 200 mW.

It operates reliably within a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 220.

The maximum transition frequency for this model is 100 MHz, suitable for high-frequency applications.

The BC859CW,115 measures 2.2 mm in length, 1.35 mm in width, and 0.95 mm in height.

This model supports surface mount installation.

It complies with the automotive standard AEC-Q101, ensuring enhanced reliability for automotive applications.

The maximum DC collector current (Idc) for the BC859CW,115 is -100 mA.

This transistor is housed in a 3-pin UMT package.

This model is RoHS compliant, meeting environmental standards.

It is suitable for various applications, including industrial controls, automotive electronics, communication devices, and general-purpose amplifier circuits.

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