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Microchip N-Channel MOSFET 140 A 12 V 4-Pin TO-247 MSC060SMA070B4

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Microchip N-Channel MOSFET 140 A 12 V 4-Pin TO-247 MSC060SMA070B4

Name: Microchip N-Channel MOSFET 140 A 12 V 4-Pin TO-247 MSC060SMA070B4
Brand: Microchip
SKU: 405823
Price: 9.05 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Model	MSC060SMA070B4
Mount Type	Through Hole
Series	MSC060SMA070B4
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	140A
Maximum Drain Source Voltage Vds	12V
Maximum Drain Source Resistance Rds	8Ω
Maximum Power Dissipation Pd	1.6W
Typical Gate Charge Qg @ Vgs	56nC
Maximum Gate Source Voltage Vgs	2V
Forward Voltage Vf	1.8V

Key Features

The device supports a maximum continuous drain current of 140 A.
It operates at a maximum drain-source voltage of 12 V, suitable for high-current circuits.
The package type is TO-247 designed for through-hole mounting.
Features low gate charge of 56 nC allowing fast switching speeds.
Maximum power dissipation is 1.6 W ensuring durability under load.
Operates reliably across a wide temperature range from -55°C to 175°C.
Low maximum drain-source resistance of 8 Ω reduces power loss.
Complies with RoHS environmental standards for safe usage.

Product Description

Microchip MSC060SMA070B4 is a high-performance N-Channel MOSFET designed for efficient power switching in industrial and electronic systems. Packaged in a 4-pin TO-247 form factor, it supports a continuous drain current rating of 140 A and a maximum drain-source voltage of 12 V, making it suitable for demanding power applications.

This MOSFET offers low gate charge of 56 nC and low internal gate resistance, enabling fast switching and reduced switching losses. The device can operate stably at high junction temperatures up to 175°C, ensuring reliable functionality in harsh environments.

With a maximum power dissipation of 1.6 W and a typical forward voltage of 1.8 V, it balances power capacity and efficiency. Its through-hole mounting and 4-pin configuration facilitate easy integration into existing circuitry.

The device complies with RoHS standards, reflecting its environmental safety. Its stable operation and superior avalanche ruggedness make it suitable for automotive, industrial, HVAC, manufacturing, and power management applications.

Microchip’s silicon carbide MOSFET technology improves upon traditional silicon MOSFETs and IGBTs, offering lower total cost of ownership in high voltage and high current settings.

The device supports a maximum continuous drain current of 140 A. Operates at a maximum drain-source voltage of 12 V. Low gate charge of 56 nC for efficient switching. Maximum power dissipation rating of 1.6 W. Wide operating temperature range from -55°C to 175°C.

Package type is TO-247 with through hole mount. Low maximum drain-source resistance of 8 Ω. Complies with RoHS environmental regulations. Fast, reliable body diode and superior avalanche ruggedness. Applications include industrial, automotive, manufacturing, and power electronics.

Efficient and durable, the Microchip MSC060SMA070B4 MOSFET is an ideal choice for high power switching and industrial electronics projects. Explore more discrete semiconductor components and power devices in EnvMart’s Electronics & Electricals category to find dependable solutions for your applications.