Microchip N-Channel MOSFET 5 A, 1.7 kV TO-247 Package MSC750SMA170B

Microchip MSC750SMA170B is a high-voltage N-Channel MOSFET designed for power switching applications in industrial, laboratory, and electronics manufacturing contexts. It supports a maximum continuous drain current of 5 A at a maximum drain-source voltage of 1.7 kV, providing reliable performance in high voltage circuits.

This device comes in a TO-247 through hole package, offering excellent thermal management and mechanical stability for mounting on printed circuit boards. Its low gate charge of 11 nC and low internal gate resistance enable fast switching speeds which are advantageous in efficient power conversion and switching circuits.

The MOSFET operates reliably across a wide temperature range from -55°C up to 175°C junction temperature, ensuring stable operation even in demanding environments such as industrial machinery control and power supplies.

Featuring a maximum power dissipation of 1.6 W and a low maximum drain-source resistance of 8 Ω, the MSC750SMA170B reduces conduction losses improving overall system efficiency. The device includes a forward voltage drop of 1.8 V and a maximum gate-source voltage of 2 V for safe operation limits.

Microchip's silicon carbide power MOSFET enhances performance over traditional silicon MOSFET and IGBT technologies, lowering cost of ownership in high voltage applications. This product is RoHS compliant, making it suitable for environmentally-conscious engineering requirements.

High voltage 1.7 kV maximum drain-source voltage ensures reliable operation. Maximum continuous drain current rating of 5 A for robust current handling. Low gate charge of 11 nC supports fast switching performance. Through hole TO-247 package offers efficient mounting and heat dissipation.

Operating temperature range from -55°C to 175°C enables use in harsh environments. Maximum power dissipation rating of 1.6 W ensures device reliability. Low maximum drain-source resistance of 8 Ω reduces conduction losses.

Maximum gate-source voltage rating of 2 V for device protection. Forward voltage of 1.8 V supports optimized power efficiency. RoHS compliant, supporting environmental and safety standards.

This N-Channel MOSFET is widely used in electronic power controls, industrial automation, laboratory power supplies, and manufacturing equipment. It provides advanced switching capability while maintaining ruggedness and thermal stability.

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