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Microchip N-Channel MOSFET, 20 A, 700 V, TO-247 Package, Through Hole Mount MSC090SMA070B

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model MSC090SMA070B
Mount Type Through Hole
Series MSC090SMA070B
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Channel Type N
Maximum Continuous Drain Current Id 20A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 8Ω
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs 2V
Forward Voltage Vf 1.8V

Key Features

  • High voltage rating of 700 V suitable for demanding power applications.
  • Maximum continuous drain current of 20 A ensures robust power handling.
  • Low drain-source resistance of 8 Ω enhances efficiency.
  • Operates reliably across a wide temperature range from -55°C to 175°C.
  • Low gate charge of 38 nC for fast switching performance.
  • Forward voltage of 1.8 V minimizes conduction loss.
  • RoHS compliant to meet environmental standards.
  • Package type TO-247 enables easy through-hole mounting.

Product Description

Microchip MSC090SMA070B is an N-Channel power MOSFET designed for high voltage and current applications, featuring a maximum continuous drain current of 20 A and a drain-source voltage rating of 700 V. Packaged in a TO-247 case with through-hole mount, this MOSFET is suitable for demanding industrial, power management, and electronic control systems.

Its low drain-source resistance (8 Ω) and fast switching capability with a typical gate charge of 38 nC provide high efficiency in power conversion and switching circuits. The device supports operation across a wide temperature range from -55°C up to 175°C, ensuring reliability under harsh conditions.

The MOSFET’s forward voltage of 1.8 V reduces conduction losses, making it suitable for power supplies, motor control, and other energy-intensive applications. Its maximum power dissipation rating of 1.6 W supports stable and safe usage in compact electronic designs.

This product is RoHS compliant, supporting environmentally responsible manufacturing and disposal.

The Microchip MSC090SMA070B is ideal for use in industrial, laboratory, manufacturing, HVAC, and automotive electronic circuits requiring robust and efficient semiconductor switches.

High voltage rating of 700 V suitable for demanding power applications. Maximum continuous drain current of 20 A ensures robust power handling. Low drain-source resistance of 8 Ω enhances efficiency. Operates reliably across a wide temperature range from -55°C to 175°C.

Low gate charge of 38 nC for fast switching performance. Forward voltage of 1.8 V minimizes conduction loss. RoHS compliant to meet environmental standards. Package type TO-247 enables easy through-hole mounting. Maximum power dissipation rating of 1.6 W for stable operation.

Maximum gate-source voltage limited to 2 V for device protection. Explore the range of high-performance MOSFETs at EnvMart for your semiconductor and power conversion needs.

Microchip N-Channel MOSFET, 20 A, 700 V, TO-247 Package, Through Hole Mount MSC090SMA070B
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Frequently Asked Questions

The maximum continuous drain current for this model is 20 A.

This MOSFET has a drain-source voltage rating of 700 V.

The MSC090SMA070B is packaged in a TO-247 case, suitable for through-hole mounting.

It operates reliably across a wide temperature range from -55°C to 175°C.

The typical gate charge is 38 nC, which supports fast switching performance.

The forward voltage for this model is 1.8 V, which helps minimize conduction losses.

The maximum power dissipation rating is 1.6 W, supporting stable operation.

The maximum gate-source voltage is limited to 2 V for device protection.

The maximum drain-source resistance is 8 Ω, enhancing efficiency in power handling.

Yes, the MSC090SMA070B is RoHS compliant, meeting environmental standards.

This model is suitable for industrial, power management, and electronic control systems.

The country of origin for this MOSFET is India.

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