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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC090SMA070B |
| Mount Type | Through Hole |
| Series | MSC090SMA070B |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC090SMA070B is an N-Channel power MOSFET designed for high voltage and current applications, featuring a maximum continuous drain current of 20 A and a drain-source voltage rating of 700 V. Packaged in a TO-247 case with through-hole mount, this MOSFET is suitable for demanding industrial, power management, and electronic control systems.
Its low drain-source resistance (8 Ω) and fast switching capability with a typical gate charge of 38 nC provide high efficiency in power conversion and switching circuits. The device supports operation across a wide temperature range from -55°C up to 175°C, ensuring reliability under harsh conditions.
The MOSFET’s forward voltage of 1.8 V reduces conduction losses, making it suitable for power supplies, motor control, and other energy-intensive applications. Its maximum power dissipation rating of 1.6 W supports stable and safe usage in compact electronic designs.
This product is RoHS compliant, supporting environmentally responsible manufacturing and disposal.
The Microchip MSC090SMA070B is ideal for use in industrial, laboratory, manufacturing, HVAC, and automotive electronic circuits requiring robust and efficient semiconductor switches.
High voltage rating of 700 V suitable for demanding power applications. Maximum continuous drain current of 20 A ensures robust power handling. Low drain-source resistance of 8 Ω enhances efficiency. Operates reliably across a wide temperature range from -55°C to 175°C.
Low gate charge of 38 nC for fast switching performance. Forward voltage of 1.8 V minimizes conduction loss. RoHS compliant to meet environmental standards. Package type TO-247 enables easy through-hole mounting. Maximum power dissipation rating of 1.6 W for stable operation.
Maximum gate-source voltage limited to 2 V for device protection. Explore the range of high-performance MOSFETs at EnvMart for your semiconductor and power conversion needs.
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