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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.1mm |
| Length | 3mm |
| Model | BSS138BKAHZGT116 |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 680mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
ROHM BSS138BKAHZGT116 is an automotive-grade N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 400 mA and maximum drain-source voltage of 60 V. This 3-pin SOT-23 packaged semiconductor device is engineered for switching circuits, high-side load switches, and relay driver applications in automotive and industrial environments.
This MOSFET delivers low drain-source resistance of 680 mΩ which helps minimize conduction losses and enhance efficiency. It supports a maximum power dissipation of 350 mW and operates reliably across a temperature range from -55°C to 150°C, meeting the stringent AEC-Q101 automotive standard for extended durability and reliability.
The device incorporates an ESD protection diode within the SST3 package and utilizes ultra low voltage drive technology alongside Pb-free lead plating and halogen-free materials, making it an environmentally compliant and high-performance choice for sensitive electronic circuits.
With a compact foot-print of 3 mm length, 1.4 mm width, and 1.1 mm height and a surface mount design, this MOSFET is suitable for space-constrained PCB layouts in automotive, industrial, and power management applications. The maximum gate-source voltage rating is 20 V, and it delivers a typical forward voltage of 1.2 V.
Operates with maximum continuous drain current of 400 mA. Maximum drain-source voltage rating of 60 V. Low Rds(on) resistance of 680 milliohms. Maximum power dissipation at 350 milliwatts. Wide operating temperature from -55°C to 150°C.
3-pin SOT-23 surface mount package for compact installations. Compliant with AEC-Q101 automotive standards. Inbuilt ESD protection diode for enhanced device reliability. Pb-free lead plating and halogen-free construction.
Ideal for automotive, industrial switching, and relay driver uses. This robust and efficient MOSFET is designed for demanding industrial, automotive, and electronic component applications, combining size efficiency with electrical performance.
Explore more automotive-grade MOSFET devices and semiconductors in the Electronics & Electricals Discrete Semiconductors MOSFET category at EnvMart.
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