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ROHM N-Channel MOSFET 400 mA 60 V Enhancement 3-Pin SOT-23 BSS138BKAHZGT116

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.1mm
Length 3mm
Model BSS138BKAHZGT116
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 400mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 680mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 350mW
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Operates with a maximum continuous drain current of 400 mA.
  • Supports up to 60 V maximum drain-source voltage.
  • Packaged in a compact 3-pin SOT-23 surface mount package.
  • Features an enhancement mode channel with low drain-source resistance of 680 mΩ.
  • Maximum power dissipation of 350 mW suitable for low power applications.
  • Operates across a wide temperature range from -55°C to 150°C.
  • Complies with automotive standard AEC-Q101 for high reliability.
  • Incorporates ultra low voltage drive and Pb-free lead plating.

Product Description

ROHM BSS138BKAHZGT116 is an automotive-grade N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 400 mA and maximum drain-source voltage of 60 V. This 3-pin SOT-23 packaged semiconductor device is engineered for switching circuits, high-side load switches, and relay driver applications in automotive and industrial environments.

This MOSFET delivers low drain-source resistance of 680 mΩ which helps minimize conduction losses and enhance efficiency. It supports a maximum power dissipation of 350 mW and operates reliably across a temperature range from -55°C to 150°C, meeting the stringent AEC-Q101 automotive standard for extended durability and reliability.

The device incorporates an ESD protection diode within the SST3 package and utilizes ultra low voltage drive technology alongside Pb-free lead plating and halogen-free materials, making it an environmentally compliant and high-performance choice for sensitive electronic circuits.

With a compact foot-print of 3 mm length, 1.4 mm width, and 1.1 mm height and a surface mount design, this MOSFET is suitable for space-constrained PCB layouts in automotive, industrial, and power management applications. The maximum gate-source voltage rating is 20 V, and it delivers a typical forward voltage of 1.2 V.

Operates with maximum continuous drain current of 400 mA. Maximum drain-source voltage rating of 60 V. Low Rds(on) resistance of 680 milliohms. Maximum power dissipation at 350 milliwatts. Wide operating temperature from -55°C to 150°C.

3-pin SOT-23 surface mount package for compact installations. Compliant with AEC-Q101 automotive standards. Inbuilt ESD protection diode for enhanced device reliability. Pb-free lead plating and halogen-free construction.

Ideal for automotive, industrial switching, and relay driver uses. This robust and efficient MOSFET is designed for demanding industrial, automotive, and electronic component applications, combining size efficiency with electrical performance.

Explore more automotive-grade MOSFET devices and semiconductors in the Electronics & Electricals Discrete Semiconductors MOSFET category at EnvMart.

ROHM N-Channel MOSFET 400 mA 60 V Enhancement 3-Pin SOT-23 BSS138BKAHZGT116
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 400 mA.

It supports a maximum drain-source voltage of 60 V.

This model features a low drain-source resistance of 680 mΩ.

The maximum power dissipation for this device is 350 mW.

It operates reliably across a wide temperature range from -55°C to 150°C.

This MOSFET is packaged in a compact 3-pin SOT-23 surface mount package.

It complies with the AEC-Q101 automotive standard for high reliability.

The maximum gate-source voltage rating is 20 V.

It delivers a typical forward voltage of 1.2 V.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

This model features an N-channel enhancement mode.

It is suitable for switching circuits, high-side load switches, and relay driver applications in automotive and industrial environments.

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