Microchip N-Channel MOSFET TN2106N3-G, 300 mA, 60 V Enhancement Mode, 3-Pin TO-92 Package

Microchip TN2106N3-G is a low threshold enhancement-mode N-Channel MOSFET designed to deliver excellent switching performance and power handling in a compact TO-92 through-hole package. Utilizing a robust vertical DMOS silicon gate manufacturing process, this device combines the advantages of bipolar transistor power handling capability with MOSFET's high input impedance and fast switching characteristics.

This MOSFET supports a maximum continuous drain current of 300 mA and a drain-source voltage rating of 60 V, making it suitable for low power switching and amplification tasks in industrial, electronic, and laboratory applications. The enhancement mode operation ensures normally-off behavior for secure and energy-efficient switching.

It has a maximum power dissipation of 740 mW, with a low maximum drain-source resistance of 5 Ω, allowing efficient conduction and reduced heat generation. The device supports a maximum gate-source voltage of 20 V and functions reliably over a temperature range of -55°C to 150°C, accommodating harsh operational environments typically encountered in electronics manufacturing and power management.

Additional features include an integral source-drain diode facilitating switching reliability and inherent thermal stability, protecting against thermal runaway and secondary breakdown. The compact dimensions of approximately 5.08 mm length, 4.06 mm width, and 5.33 mm height enable use in space-constrained circuit designs.

The TN2106N3-G package is suitable for through-hole mounting, facilitating easy prototyping and replacement. It finds wide applications in circuits requiring efficient switching, such as power supplies, motor controls, signal amplification, and general-purpose low voltage switched loads in industrial, commercial, and educational lab environments.

The device features enhancement mode operation ensuring normally-off switching. It employs a vertical DMOS silicon-gate structure for efficient power handling. Maximum continuous drain current is 300 mA with a maximum power dissipation of 740 mW.

Designed for low threshold voltage and fast switching applications. Maximum drain-source resistance is 5 Ω and forward voltage is 1.8 V. Operating temperature range is from -55°C to 150°C allowing reliable performance in diverse environments.

Integral source-drain diode enhances switching reliability and thermal stability. Mount type is through-hole with a compact TO-92 package suitable for discrete semiconductor applications. High input impedance and protection from thermal runaway make it ideal for switching and amplification.

Manufactured under silicon gate technology providing consistent quality with vertical DMOS design.

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