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ROHM P-Channel MOSFET 6 A, 20 V Enhancement Mode, 3-Pin Surface-Mount SC-96 Package RQ5C060BCTCL

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 950μm
Length 3mm
Model RQ5C060BCTCL
Width 1.8mm
Mount Type Surface
Series RQ5C060BC
Maximum Operating Temperature 150°C
Package Type SC-96
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 51mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 19.2nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • Rated for maximum continuous drain current of 6 amperes.
  • Supports a drain-source voltage of up to 20 volts.
  • Package type is SC-96 suitable for surface mounting.
  • Enhancement mode channel with Type P configuration for controlled switching.
  • Maximum power dissipation rated at 1 watt.
  • Operating temperature range from -55°C to 150°C.
  • Low maximum drain-source resistance of 51 milliohms.
  • Compact dimensions with length 3 mm, width 1.8 mm, and height 950 micrometers.

Product Description

ROHM RQ5C060BCTCL is a high-performance P-Channel MOSFET transistor designed for efficient switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 6 A and drain-source voltage rating of 20 V, this device achieves reliable performance in low-voltage power applications. Its enhancement mode channel and surface-mount SC-96 package make it well-suited for compact electronic assemblies in industrial, consumer electronics, and power management contexts.

The MOSFET offers a maximum power dissipation of 1 watt and operates effectively across a wide temperature range from -55°C to 150°C, ensuring robustness under various environmental conditions. The transistor's low maximum drain-source resistance of 51 mΩ supports energy-efficient conduction, optimizing circuit efficiency. Its typical gate charge of 19.2 nC at Vgs enhances fast switching capabilities.

Physical dimensions of 3 mm length, 1.8 mm width, and 950 μm height enable space-saving PCB designs. The device’s pin count of 3 enables straightforward integration in surface-mounted circuits with excellent reliability and mechanical stability.

Rated maximum continuous drain current of 6 A for handling moderate power levels. Drain-source voltage rating of 20 V supports various DC power applications. Compact SC-96 surface mount package with 3 pins for flexible PCB layouts.

Enhancement mode with P-Channel for efficient switching and amplification. Robust operation over temperature range from -55°C to 150°C expands environmental suitability. Low on-resistance 51 mΩ helps reduce conduction losses and heat generation.

Maximum power dissipation of 1 watt allows for controlled thermal management. Dimensions optimized for high-density electronic assemblies.

This ROHM MOSFET is commonly employed in industrial electronics, power supply circuits, and portable devices requiring low-voltage, moderate-current switching. Its rugged construction and reliable electrical characteristics make it an essential component in semiconductor discrete device inventories. Explore the full suite of ROHM semiconductor components available at EnvMart for enhanced design flexibility and performance.

ROHM P-Channel MOSFET 6 A, 20 V Enhancement Mode, 3-Pin Surface-Mount SC-96 Package RQ5C060BCTCL
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 amperes.

This MOSFET supports a drain-source voltage rating of up to 20 volts.

The dimensions of this model are 3 mm in length, 1.8 mm in width, and 950 micrometers in height.

It comes in an SC-96 surface-mount package suitable for compact electronic assemblies.

The operating temperature range for this model is from -55°C to 150°C.

The maximum power dissipation rated for this MOSFET is 1 watt.

The maximum drain-source resistance is rated at 51 milliohms.

This model features an enhancement mode channel with a Type P configuration.

The typical gate charge at Vgs is 19.2 nanocoulombs.

This device has a pin count of 3, allowing for straightforward integration into circuits.

The maximum gate-source voltage is rated at -8V to +8V.

This MOSFET is commonly employed in industrial electronics, power supply circuits, and portable devices requiring low-voltage, moderate-current switching.

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