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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RQ5C060BCTCL |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RQ5C060BC |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 51mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 19.2nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
ROHM RQ5C060BCTCL is a high-performance P-Channel MOSFET transistor designed for efficient switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 6 A and drain-source voltage rating of 20 V, this device achieves reliable performance in low-voltage power applications. Its enhancement mode channel and surface-mount SC-96 package make it well-suited for compact electronic assemblies in industrial, consumer electronics, and power management contexts.
The MOSFET offers a maximum power dissipation of 1 watt and operates effectively across a wide temperature range from -55°C to 150°C, ensuring robustness under various environmental conditions. The transistor's low maximum drain-source resistance of 51 mΩ supports energy-efficient conduction, optimizing circuit efficiency. Its typical gate charge of 19.2 nC at Vgs enhances fast switching capabilities.
Physical dimensions of 3 mm length, 1.8 mm width, and 950 μm height enable space-saving PCB designs. The device’s pin count of 3 enables straightforward integration in surface-mounted circuits with excellent reliability and mechanical stability.
Rated maximum continuous drain current of 6 A for handling moderate power levels. Drain-source voltage rating of 20 V supports various DC power applications. Compact SC-96 surface mount package with 3 pins for flexible PCB layouts.
Enhancement mode with P-Channel for efficient switching and amplification. Robust operation over temperature range from -55°C to 150°C expands environmental suitability. Low on-resistance 51 mΩ helps reduce conduction losses and heat generation.
Maximum power dissipation of 1 watt allows for controlled thermal management. Dimensions optimized for high-density electronic assemblies.
This ROHM MOSFET is commonly employed in industrial electronics, power supply circuits, and portable devices requiring low-voltage, moderate-current switching. Its rugged construction and reliable electrical characteristics make it an essential component in semiconductor discrete device inventories. Explore the full suite of ROHM semiconductor components available at EnvMart for enhanced design flexibility and performance.
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