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ROHM N-Channel MOSFET, 3.7 A, 1.7 kV Enhancement Mode, TO-3PFM Package, 3-Pin SCT2H12NZGC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 21mm |
| Length | 16mm |
| Model | SCT2H12NZGC11 |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | SCT2H12NZ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PFM |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-free lead plating, RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 1.7kV |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -6, +22V |
| Forward Voltage Vf | 4.3V |
Key Features
- High voltage rating suitable for demanding power applications.
- Enhancement mode channel for precise switching control.
- Compact TO-3PFM through-hole package with 3 pins.
- Maximum continuous drain current of 3.7 amperes.
- Maximum power dissipation of 35 watts for efficient thermal management.
- Operating temperature range from -55°C up to 175°C.
- Low typical gate charge of 21 nC for fast switching performance.
- Pb-free lead plating compliant with RoHS standards.
Product Description
ROHM SCT2H12NZGC11 is a high-voltage, high-current N-channel MOSFET semiconductor designed for power electronic applications requiring reliable switching and efficient performance. It features an enhancement-mode channel type with a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 1.7 kV. The device is housed in a robust TO-3PFM package suitable for through-hole mounting, which facilitates easy integration into various PCB designs.
The MOSFET offers a maximum power dissipation rating of 35 W, allowing it to handle significant power loads while maintaining thermal stability. Its capability to operate in a temperature range from -55°C to 175°C ensures durability in demanding industrial environments.
With a typical gate charge of only 21 nC at a gate-to-source voltage of 21 V, the SCT2H12NZGC11 supports fast switching speeds, making it ideal for efficient power conversion and control circuits such as in industrial power supplies, motor drives, and high-voltage switching applications.
The device includes Pb-free lead plating and complies with RoHS environmental standards, reflecting commitment to sustainability and regulatory compliance.
Physical dimensions include a length of 16 mm, width of 5 mm, and a height of 21 mm, providing a compact form factor for tight circuit layouts. The maximum drain-source resistance is rated at 1.5 Ω, and forward voltage is specified at 4.3 V, optimizing conduction efficiency.
High voltage rating suitable for demanding power applications. Enhancement mode channel for precise switching control. Compact TO-3PFM through-hole package with 3 pins. Maximum continuous drain current of 3.7 amperes. Maximum power dissipation of 35 watts for efficient thermal management.
Operating temperature range from -55°C up to 175°C. Low typical gate charge of 21 nC for fast switching performance. Pb-free lead plating compliant with RoHS standards.
This semiconductor is well suited for use across a broad array of industrial, power management, and electronic manufacturing applications. It is recommended for use in industrial power control, manufacturing automation, HVAC systems, and other high-voltage switching scenarios.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.7 A.
The maximum drain-source voltage is rated at 1.7 kV.
It has a maximum power dissipation rating of 35 W, allowing it to handle significant power loads effectively.
The operating temperature range is from -55°C to 175°C.
The typical gate charge at a gate-to-source voltage of 21 V is 21 nC.
The dimensions are 16 mm in length, 5 mm in width, and 21 mm in height.
This model is designed for through-hole mounting.
It features an N-channel type for efficient switching control.
The maximum gate-source voltage is rated at -6 V to +22 V.
It features Pb-free lead plating and complies with RoHS standards.
This unit is suitable for industrial power control, manufacturing automation, and high-voltage switching applications.
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