ROHM N-Channel MOSFET 1.5 A 60 V Surface Mount SOT-323 Package RSF015N06TL

ROHM RSF015N06TL is an N-Channel MOSFET designed for power semiconductor applications requiring efficient switching and low on-resistance. This device supports a maximum continuous drain current of 1.5 A and can withstand a maximum drain-source voltage of 60 V, making it suitable for various industrial electronics and power control circuits.

The compact SOT-323 package allows easy surface mounting on PCBs, enabling space-saving designs in electronics manufacturing. With an enhancement mode channel, the MOSFET offers simple gate voltage control for reliable switching. Its low drain-source resistance (350 milliohms) helps reduce power losses and improve overall device efficiency in power management.

Thermal performance is well rated, supporting power dissipation up to 800 milliwatts and an operating temperature range from -55°C up to 150°C. These features make the RSF015N06TL ideal for automotive systems, industrial control, and consumer electronics where durability and stable operation under varied conditions are required.

Additional electrical characteristics include a maximum gate-source voltage of ±20 V for robust tolerance, typical gate charge of 2 nanocoulombs, and a forward voltage drop of 1.2 V. These values contribute to responsive switching and energy-efficient operation.

Supports continuous drain current up to 1.5 A for moderate power applications. Maximum drain to source voltage rating of 60 V ensures reliable operation. Packaged in a compact 3-pin SOT-323 surface mount case for PCB integration.

Low drain-source resistance of 350 milliohms minimizes power loss. Enhancement mode channel type for easy gate control. Maximum power dissipation of 800 milliwatts suitable for small signal applications. Wide operating temperature range from -55°C to 150°C supports harsh environments.

Maximum gate-source voltage rated at ±20 V for robust gate drive tolerance. Forward voltage of 1.2 V for reduced conduction losses. Physical dimensions approximately 2.1 mm length, 1.8 mm width, and 820 µm height.

This N-channel MOSFET is widely used in industrial electronics, automotive circuits, and consumer devices requiring efficient power switching and compact packaging. Reliable operation in harsh temperature environments ensures suitability for automotive and industrial control applications.

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