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Microchip P-Channel Enhancement Mode MOSFET 175 mA 40 V 3-Pin TO-92 TP2104N3-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | TP2104N3-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 175mA |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 740mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device is designed for low threshold voltage, high breakdown voltage, and fast switching speeds.
- Maximum Power Dissipation is 740 mW, allowing reliable operation up to 150°C.
- Features a maximum Drain Source Resistance of 10 Ω, ensuring efficient conduction.
- Operates reliably from -55°C to 150°C, suitable for a wide temperature range.
- Packaged in compact TO-92 form factor measuring 5.08 mm length, 4.06 mm width, and 5.33 mm height.
- Enhancement mode operation with high input impedance and low input capacitance.
- Maximum Gate Source Voltage of -20 V to +20 V, providing robust gate control.
Product Description
Microchip TP2104N3-G is a P-Channel enhancement mode MOSFET transistor designed for various electronic switching and amplifying applications requiring a low threshold voltage and high breakdown voltage.
Featuring a compact 3-pin TO-92 package suitable for through-hole mounting, this MOSFET delivers a continuous drain current of up to 175 mA and can withstand a maximum drain-source voltage of 40 V. The device supports a maximum power dissipation of 740 mW which allows it to operate up to a temperature of 150°C, making it reliable in industrial and commercial electronic circuits.
With a maximum drain-source resistance of 10 Ω and a forward voltage of -1.2 V, the TP2104N3-G is optimized for efficient switching performance. Its wide operating temperature range from -55°C to 150°C ensures excellent durability and suitability for harsh environments.
The device maintains high input impedance and low input capacitance, facilitating fast switching speeds and minimizing power loss in control circuits. The gate voltage can vary between -20 V and +20 V to provide flexible gate drive conditions.
Key physical dimensions include a height of 5.33 mm, length of 5.08 mm, and width of 4.06 mm, making it suitable for tight PCB layouts. The MOSFET is ideal for use in industrial electronics, power management, automotive circuits, and consumer electronic applications.
It supports through-hole mounting for easy PCB assembly and prototyping. The P-channel channel type and enhancement mode ensure normally-off operation, enhancing safety and control. Compact TO-92 package facilitates integration into small form factor designs.
Reliable performance under high temperature and varying voltage conditions. Explore the diverse range of Microchip semiconductor components available at EnvMart for complete power and signal management solutions in your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 175 mA.
It can withstand a maximum drain-source voltage of 40 V.
The maximum power dissipation is 740 mW, allowing for reliable operation.
It operates reliably within a temperature range of -55°C to 150°C.
The dimensions are 5.08 mm in length, 4.06 mm in width, and 5.33 mm in height.
This model supports through-hole mounting, suitable for PCB assembly.
The maximum gate-source voltage is -20 V to +20 V.
It features a maximum drain-source resistance of 10 Ω, ensuring efficient conduction.
The channel type is P-channel, operating in enhancement mode.
The forward voltage is -1.2 V.
It is suitable for various electronic switching and amplifying applications, including industrial electronics and automotive circuits.
This MOSFET maintains high input impedance and low input capacitance, facilitating fast switching speeds.
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