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Microchip N-Channel Enhancement Mode MOSFET 190 mA 240 V TO-92 Package VN2410L-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.2mm |
| Model | VN2410L-G |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 190mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 10Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET supports a maximum continuous drain current of 190 mA.
- It features a maximum drain-source voltage rating of 240 V enabling high voltage operation.
- The package type is TO-92 suitable for through-hole mounting with 3 pins.
- Maximum power dissipation is rated at 1 W ensuring reliable performance.
- It supports a maximum gate-source voltage of -20 to +20 V for robust gate control.
- Operating temperature ranges from -55°C to a maximum of 150°C for wide environmental tolerance.
- Low maximum drain-source resistance of 10 ohms ensures efficient conduction.
- The forward voltage drop at conduction is 1.2 V.
Product Description
Microchip VN2410L-G is an N-channel enhancement mode MOSFET housed in a TO-92 three-pin package. This transistor is optimized for use in switching and amplification circuits, featuring a low threshold voltage and high breakdown voltage of 240 V. The device supports a continuous drain current of 190 mA and dissipates power up to 1 watt, making it suitable for low power industrial and electronic applications.
Designed for through-hole mounting, the TO-92 package provides compactness with a height of 5.33 mm, length of 5.2 mm, and width of 4.19 mm. The MOSFET operates effectively across a temperature range from -55°C up to 150°C, ensuring durability in harsh environmental conditions. Its enhancement mode channel type and low drain-source resistance of 10 Ω enable efficient switching with minimal losses.
This MOSFET can tolerate gate-source voltages from -20 V to +20 V, providing flexibility for control circuitry. The forward voltage drop of 1.2 V offers stable operation at typical conduction levels. It is widely applicable in industrial manufacturing, electronic circuit design, power management, and automation systems requiring reliable low current switching components.
Low threshold voltage suitable for sensitive switching applications. High input impedance reduces loading effects in control circuits. Fast switching speed supports high frequency operation. Robust construction ensures long-term reliability in industrial environments.
Compact TO-92 package enables space-saving PCB layouts. Wide operating temperature range accommodates diverse applications.
This Microchip N-Channel MOSFET VN2410L-G is ideal for electronic component inventories, industrial automation designs, and laboratories requiring dependable, low power MOSFETs. Explore further Microchip semiconductor devices and MOSFET-related products to complete your component selection at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 190 mA.
It features a maximum drain-source voltage rating of 240 V, allowing for high voltage operation.
The VN2410L-G is housed in a TO-92 package suitable for through-hole mounting with 3 pins.
The operating temperature ranges from -55°C to a maximum of 150°C, providing wide environmental tolerance.
This MOSFET has a maximum power dissipation rating of 1 W.
It supports a maximum gate-source voltage of -20 to +20 V, allowing for robust gate control.
The maximum drain-source resistance of this model is 10 ohms, ensuring efficient conduction.
The dimensions of this MOSFET are 5.33 mm in height, 5.2 mm in length, and 4.19 mm in width.
The forward voltage drop at conduction is 1.2 V, providing stable operation at typical conduction levels.
This MOSFET is widely applicable in industrial manufacturing, electronic circuit design, power management, and automation systems.
It features an N-channel enhancement mode, optimized for switching and amplification circuits.
The low threshold voltage is suitable for sensitive switching applications, reducing loading effects in control circuits.
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