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STMicroelectronics 650 V 22 A Silicon Carbide Schottky Diode Single 2-Pin TO-220AC STPSC4H065DI
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 3.75mm |
| Brand | STMicroelectronics |
| Height | 15.9mm |
| Length | 10.4mm |
| Model | STPSC4H065DI |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STPSC |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AC |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 22A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 170μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A |
| Maximum Forward Voltage Vf | 2.5V |
Key Features
- Features a single diode configuration with 2-pin through-hole mounting.
- Designed with a TO-220AC package for ease of installation and heat dissipation.
- Maximum continuous forward current is 22 A and peak non-repetitive forward surge current is 200 A.
- Capable of operating within a temperature range of -40°C to 175°C, suitable for harsh environments.
- Exhibits low forward voltage of 2.5 V for efficient power rectification.
- Peak reverse repetitive voltage rating of 650 V safeguards circuits from voltage spikes.
- Peak reverse current is low at 170 μA, minimizing leakage losses.
- Constructed using Silicon Carbide technology to provide ultra-fast switching and negligible reverse recovery.
Product Description
STMicroelectronics STPSC4H065DI is a Silicon Carbide (SiC) Schottky diode designed for high-performance power rectification applications. With a robust 650 V peak reverse voltage and 22 A maximum continuous forward current capability, this diode excels in demanding electronic circuits requiring efficient switching and low losses.
The diode features a single diode configuration housed in a TO-220AC through-hole package that facilitates easy mounting and excellent thermal management, making it suitable for industrial, automotive, and power supply applications.
This device operates over a wide temperature range from -40°C to +175°C, enabling reliable operation in extreme environments. Its maximum forward voltage of 2.5 V ensures efficient conduction, and a peak non-repetitive forward surge current capability of 200 A supports high transient loads.
The diode exhibits an extremely low peak reverse current of 170 μA to minimize leakage currents, improving overall circuit efficiency. The Silicon Carbide technology used eliminates reverse recovery, thereby enabling ultra-fast switching and enhancing power factor correction (PFC) capabilities.
Its compact physical dimensions - 10.4 mm length, 4.6 mm width, 15.9 mm height, and 3.75 mm diameter - allow integration into limited-space assemblies. This product is ideal for electrical power electronics, industrial motor drives, renewable energy systems, and automotive power electronics.
Single diode configuration with 2-pin TO-220AC package. Maximum continuous forward current: 22 A and peak surge current: 200 A. Peak reverse repetitive voltage: 650 V. Operating temperature range: -40°C to 175°C. Low forward voltage drop of 2.5 V.
Negligible reverse recovery for fast switching. Compact and robust package for reliable mounting and heat dissipation. Ideal for industrial, automotive, and power supply applications. Explore more high-reliability electronic components and Schottky Diodes at EnvMart for your power electronics design needs.
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Frequently Asked Questions
The maximum continuous forward current of this model is 22 A.
The peak reverse repetitive voltage rating is 650 V, which helps protect circuits from voltage spikes.
It operates within a temperature range of -40°C to 175°C, making it suitable for harsh environments.
The maximum forward voltage drop is 2.5 V, which contributes to efficient power rectification.
This diode can handle a peak non-repetitive forward surge current of 200 A.
It is housed in a TO-220AC package, designed for through-hole mounting and effective heat dissipation.
The peak reverse current is low at 170 μA, which helps minimize leakage losses.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 15.9 mm in height, with a diameter of 3.75 mm.
It features a single diode configuration, which is typical for Schottky diodes in power applications.
This model is constructed using Silicon Carbide (SiC) technology, which allows for ultra-fast switching and negligible reverse recovery.
It is ideal for use in electrical power electronics, industrial motor drives, renewable energy systems, and automotive power electronics.
This diode has a 2-pin configuration, facilitating easy integration into various circuits.
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