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Infineon RF Bipolar Transistor 80 mA NPN 20 V 3-Pin SOT-323 BFR193WH6327XTSA1

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.9mm
Length 2.1mm
Model BFR193WH6327XTSA1
Width 2mm
Mount Type Surface
Series BFR193W
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 580mW
Maximum DC Collector Current Idc 80mA
Transistor Configuration Single
Maximum Transition Frequency ft 8GHz

Key Features

  • This transistor supports a maximum DC collector current of 80 mA.
  • Operates with a maximum collector emitter voltage of 20 V ensuring robust switching performance.
  • The transistor has a maximum transition frequency of 8 GHz for high-frequency applications.
  • It features a minimum DC current gain (hFE) of 70 providing efficient amplification.
  • Designed for surface mount technology with a compact 3-pin SOT-323 package.
  • Offers maximum power dissipation of 580 mW suitable for low power applications.
  • Operates within a temperature range from -55°C to 150°C ensuring reliability under harsh conditions.
  • Its automotive standard compliance is AEC-Q101 ensuring quality for automotive use.

Product Description

Infineon BFR193WH6327XTSA1 is a RF bipolar transistor engineered for demanding electronic applications requiring high frequency and stable performance. This transistor features an NPN configuration with a maximum DC collector current of 80 mA and a maximum collector emitter voltage of 20 V. Its compact 3-pin SOT-323 surface mount package makes it ideal for space-constrained electronic circuit designs.

Boasting a maximum transition frequency of 8 GHz, it is suitable for RF and high-speed switching applications in telecommunications, signal processing, and other industrial electronics. The device can dissipate up to 580 mW, enabling efficient signal amplification while maintaining thermal stability.

The minimum DC current gain of 70 ensures effective amplification, while the transistor polarity being NPN fits common circuit requirements. This component is guaranteed to operate effectively within a temperature range of -55°C to 150°C, ensuring durability and reliability in automotive, industrial, and commercial environments.

The transistor meets the automotive AEC-Q101 standard, highlighting its suitability for automotive electronics where quality and reliability are critical. Its small dimensions of 2.1 mm length, 2 mm width, and 0.9 mm height allow integration into miniature and compact designs.

The product is RoHS compliant, demonstrating adherence to environmental and safety standards. This transistor supports a maximum DC collector current of 80 mA. Operates with a maximum collector emitter voltage of 20 V ensuring robust switching performance.

The transistor has a maximum transition frequency of 8 GHz for high-frequency applications. It features a minimum DC current gain (hFE) of 70 providing efficient amplification. Designed for surface mount technology with a compact 3-pin SOT-323 package.

Offers maximum power dissipation of 580 mW suitable for low power applications. Operates within a temperature range from -55°C to 150°C ensuring reliability under harsh conditions. Its automotive standard compliance is AEC-Q101 ensuring quality for automotive use.

Single transistor configuration with NPN polarity for common use in amplification and switching.

Infineon RF Bipolar Transistors are widely used in industrial, telecommunications, laboratory, automotive, and manufacturing applications where reliable RF performance is essential. This product is part of Infineon’s BFR193W series known for precision and efficiency in RF circuits. Browse more Infineon transistors on EnvMart for compatible components and future upgrades.

Infineon RF Bipolar Transistor 80 mA NPN 20 V 3-Pin SOT-323 BFR193WH6327XTSA1
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Frequently Asked Questions

The maximum DC collector current for this model is 80 mA.

It operates with a maximum collector emitter voltage of 20 V.

This transistor has a maximum transition frequency of 8 GHz, making it suitable for high-frequency applications.

The minimum DC current gain (hFE) is 70, providing efficient amplification.

The dimensions are 2.1 mm in length, 2 mm in width, and 0.9 mm in height.

This model is designed in a compact 3-pin SOT-323 surface mount package.

It complies with the AEC-Q101 automotive standard, ensuring quality for automotive applications.

The transistor configuration is single with NPN polarity, suitable for common amplification and switching applications.

Yes, this transistor is RoHS compliant, adhering to environmental and safety standards.

This model is widely used in telecommunications, signal processing, and other industrial electronics requiring reliable RF performance.

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