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onsemi Transistor 600 mA NPN Bipolar Junction 160 V 700 mW Power Dissipation 6-Pin SOT-23 FMBM5551

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3mm
Model FMBM5551
Width 3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V
Maximum Power Dissipation Pd 700mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 300MHz

Key Features

  • Supports a maximum DC collector current of 600 mA.
  • Maximum collector emitter voltage of 160 V ensures efficient switching applications.
  • Surface mount device with compact 6-pin SOT-23 package.
  • NPN transistor configuration with isolated transistor design.
  • Guaranteed minimum DC current gain (hFE) of 80 for reliable amplification.
  • Maximum power dissipation rating of 700 mW for thermal management.
  • Operating temperature range from -55°C to 150°C suitable for industrial environments.
  • High transition frequency of 300 MHz supports high-speed switching.

Product Description

onsemi FMBM5551 transistor is a high-performance NPN bipolar junction transistor designed for use in electronic circuits requiring a maximum DC collector current of 600 mA and a collector emitter voltage up to 160 V. Encased in a compact 6-pin SOT-23 surface mount package, it offers minimal footprint suitable for modern PCB layouts.

This transistor features isolated configuration that enhances circuit design flexibility and ensures improved electrical isolation. It delivers a minimum DC current gain of 80 which makes it suitable for amplification and switching applications.

The device supports a maximum power dissipation of 700 mW with collector base voltage rated at 180 V and emitter base voltage at 6 V. It is rated to operate reliably in harsh industrial conditions with an operating temperature range from -55°C to 150°C.

With a transition frequency of 300 MHz, the FMBM5551 is tailored for high-frequency applications including telecommunications and signal processing.

Physical dimensions of 3 mm by 3 mm by 1.1 mm height ensure compact usage in tight circuit board spaces. The transistor does not hold any special industry standards or automotive certifications and is categorized under bipolar transistors for discrete semiconductor applications.

Supports a maximum DC collector current of 600 mA. Maximum collector emitter voltage of 160 V for reliable electrical performance. Surface mount 6-pin SOT-23 package for size-efficient installation. NPN isolated configuration for enhanced circuit design.

Minimum DC current gain of 80 ensures effective transistor operation. Maximum power dissipation of 700 mW maintains thermal stability. Wide operating temperature range from -55°C to 150°C suitable for industrial use. High transition frequency of 300 MHz for rapid switching tasks.

Compact physical dimensions enable use in densely packed electronic assemblies.

This transistor is ideal for electronic manufacturing, telecommunications, industrial control systems, and power management applications. For detailed design and integration, download available datasheets, schematics, and 3D mechanical designs.

Explore the extensive category of Discrete Semiconductors and Bipolar Transistors at EnvMart for compatible components and accessories.

onsemi Transistor 600 mA NPN Bipolar Junction 160 V 700 mW Power Dissipation 6-Pin SOT-23 FMBM5551
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