onsemi Darlington NPN Transistor 800 mA 80 V SOT-23 Surface Mount 3-Pin MMBTA28

onsemi MMBTA28 is a Darlington NPN transistor designed for efficient amplification and switching in electronic circuits. It features a maximum continuous collector current of 800 mA and is rated for collector-emitter voltages up to 80 V, making it suitable for a range of electronic applications requiring medium ability to handle current and voltage stress.

The transistor delivers high current gain with a minimum DC current gain (hFE) of 10000, which improves amplification efficiency. Its maximum power dissipation of 350 mW supports safe operation under typical electrical loads in consumer electronics, industrial, and communication devices.

The package type is SOT-23, a small and widely used surface-mount package with 3 pins, enabling compact circuit designs and easy PCB assembly. Its compact dimensions (1.02 mm height and 2.51 mm length) facilitate space-saving layouts.

Operating temperature is robust, spanning from -55°C to 150°C, well suited for industrial, automotive electronics, and temperature-sensitive applications. The transistor's maximum collector-emitter saturation voltage of 1.2 V ensures low voltage loss during switching, thereby enhancing circuit efficiency.

This Darlington pair transistor includes a single element per chip, optimized for high reliability and thermal stability. Its transistor polarity is NPN, a standard type commonly used in various amplification and switching applications.

Typical applications for the MMBTA28 include electronic switching, signal amplification, driver circuits, and power regulation in industrial, laboratory, and consumer device contexts. It is ideal for industrial control equipment, communication devices, and embedded systems requiring reliable and compact transistor devices.

The package is surface-mount, supporting automated placement and soldering for high-volume manufacturing efficiency. Explore EnvMart’s extensive category of Darlington Transistors and semiconductor components for complementary and advanced electronic parts.

This transistor is designed with high current gain, boasting a minimum DC current gain (hFE) of 10000. It supports maximum power dissipation of 350 mW, making it suitable for medium power applications. Operating temperature range spans from -55°C to 150°C ensuring robust thermal performance.

Maximum collector-emitter saturation voltage is 1.2 V, supporting efficient switching operations. The device includes a single Darlington element per chip and is optimized for surface mount technology with a small form factor.

The transistor polarity is NPN, enabling use in diverse amplification and switching circuits. Package dimensions are compact with a height of 1.02 mm and length of 2.51 mm.