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onsemi Small Signal NPN Transistor 1 A 60 V 3-Pin TO-92 KSD1616AYTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model KSD1616AYTA
Width 4.19mm
Mount Type Through Hole
Series KSD1616A
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 81
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 750mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Designed for through-hole mounting in electronic circuits.
  • Maximum power dissipation of 750 mW ensures reliable operation.
  • High maximum collector-base voltage of 120 V enhances versatility.
  • Operating temperature up to 150°C supports demanding industrial environments.
  • Minimum DC current gain of 81 provides efficient amplification.
  • Compact dimensions with 21.77 mm height and 5.2 mm length.
  • Suitable for signal amplification and switching applications in industrial and laboratory electronics.
  • Three-pin configuration allows easy integration in various electronic designs.

Product Description

The onsemi KSD1616AYTA is a small signal NPN bipolar junction transistor designed with a collector current rating of 1 A and a maximum collector-emitter voltage of 60 V, packaged in a compact 3-pin TO-92 form factor. This transistor is optimized for through-hole mounting, making it ideal for a range of electronic applications including signal amplification, switching, and general-purpose industrial electronics.

This transistor exhibits a maximum power dissipation of 750 mW and can operate reliably at temperatures up to 150°C, ensuring rugged performance in demanding environments often found in industrial, manufacturing, and laboratory equipment. The device features a minimum DC current gain (hFE) of 81, providing efficient amplification capabilities in various semiconductor circuits.

With a maximum collector-base voltage of 120 V and maximum emitter-base voltage of 6 V, the KSD1616AYTA transistor offers versatility for many analog and digital electronics projects. Its transition frequency of 1 MHz enables effective operation in moderate frequency applications.

The compact size defined by a height of 21.77 mm, width of 4.19 mm, and length of 5.2 mm allows for easy integration into circuit boards without occupying excessive space, consistent with industry-standard TO-92 packaging. The transistor is designed for standard three-pin connection, facilitating straightforward circuit assembly.

This product is suitable for use in industrial, laboratory, construction, automotive, and manufacturing sectors where reliable transistor performance is critical. Its design supports diverse semiconductor applications needing robust NPN Bipolar Transistors for switching and amplification.

Designed for through-hole mounting in electronic devices. Handles maximum collector current of 1 A. Maximum voltage ratings: 60 V collector-emitter and 120 V collector-base. Power dissipation capability up to 750 mW. Operating temperature up to 150°C provides industrial reliability.

Compact 3-pin TO-92 package for flexible circuit design. Suitable for signal amplification and switching applications. Explore more bipolar transistor solutions and electronic components at EnvMart for innovative and reliable products meeting industrial quality standards.

onsemi Small Signal NPN Transistor 1 A 60 V 3-Pin TO-92 KSD1616AYTA
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