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Nexperia High Voltage PNP Bipolar Transistor 100 mA 300 V 3-Pin SOT-23 MMBTA92,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model MMBTA92,215
Width 2.5mm
Mount Type Surface
Series MMBTA92
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 25
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -300V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a compact 3-pin SOT-23 package suitable for space-constrained PCB designs.
  • It supports a maximum power dissipation of 250 mW for efficient heat management.
  • Minimum DC current gain of 25 ensures amplification capability for switching and amplification circuits.
  • Wide operating temperature range from -65°C to 150°C allows use in industrial and automotive environments.
  • Maximum transition frequency of 100 MHz makes it suitable for high-frequency switching applications.
  • Single transistor configuration with PNP polarity is ideal for various electronic circuit designs.
  • Surface mount type enables automated assembly for production efficiency.

Product Description

Nexperia MMBTA92,215 is a high voltage, PNP bipolar transistor designed for reliable switching and amplification in electronic circuits. It features a maximum DC collector current of 100 mA and collector emitter voltage of 300 V, enabling operation in demanding industrial, automotive, and general electronic applications. Packaged in a compact 3-pin SOT-23 surface mount package, this transistor supports seamless integration into modern PCB layouts where space efficiency is essential.

With a maximum power dissipation of 250 mW, the MMBTA92,215 transistor offers effective heat handling for steady performance. Its minimum DC current gain of 25 ensures sufficient amplification in switching or signal processing circuits, while its 100 MHz maximum transition frequency enables use in high-frequency applications.

The device is specified for harsh environmental conditions with an operating temperature range from -65°C to 150°C, making it suitable for automotive and industrial electronics. Its small physical dimensions (3 mm length, 2.5 mm width, and 1.1 mm height) allow compact component placements and enhanced design flexibility.

This transistor features a compact 3-pin SOT-23 package suitable for space-constrained PCB designs. It supports a maximum power dissipation of 250 mW for efficient heat management. Minimum DC current gain of 25 ensures amplification capability for switching and amplification circuits.

Wide operating temperature range from -65°C to 150°C allows use in industrial and automotive environments. Maximum transition frequency of 100 MHz makes it suitable for high-frequency switching applications. Single transistor configuration with PNP polarity is ideal for various electronic circuit designs.

Compact dimensions: length 3 mm, width 2.5 mm, height 1.1 mm, optimizing board layout. Surface mount type enables automated assembly for production efficiency.

This transistor is ideal for applications in industrial control systems, automotive electronics, power management, signal amplification, and other electronic designs requiring robust switching components. Its configuration and ratings make it a suitable choice for engineers designing high voltage, low current circuits requiring compact components and reliable operation.

Browse our extensive catalog for more Nexperia Bipolar Transistors and related semiconductor components, trusted for quality and performance in electronic manufacturing.

Nexperia High Voltage PNP Bipolar Transistor 100 mA 300 V 3-Pin SOT-23 MMBTA92,215
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is -300V.

It supports a maximum power dissipation of 250 mW.

The minimum DC current gain (hFE) is 25, which ensures adequate amplification capability.

The operating temperature range is from -65°C to 150°C, making it suitable for various environments.

The maximum transition frequency for this model is 100 MHz, allowing for high-frequency applications.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It features a surface mount type, which enables automated assembly for production efficiency.

The maximum DC collector current (Idc) is -100 mA.

This transistor is suitable for applications in industrial control systems, automotive electronics, and signal amplification.

It has a single transistor configuration with PNP polarity.

The maximum emitter base voltage (VEBO) is -5V.

The country of origin for this transistor is India.

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