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STMicroelectronics Darlington Transistor NPN 12 A 100 V, HFE 100, 3-Pin TO-220 BDW93CFP

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 16.4mm
Length 10.4mm
Model BDW93CFP
Mount Type Through Hole
Series BDW93CFP
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 12A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 5mA
Maximum Power Dissipation Pd 33W
STMicroelectronics 1 Darlington Transistor NPN, 12 A 100 V HFE 100, 3-Pin TO-220

Key Features

  • High current gain HFE of 100 ensures efficient amplification performance.
  • Maximum power dissipation rating of 33 W allows robust power handling.
  • Wide operating temperature range from -65°C to 150°C supports demanding environments.
  • 3-pin configuration suitable for standard electronic circuit designs.
  • Maximum collector cut-off current of 5 mA reduces power loss in off state.
  • Maximum collector emitter saturation voltage of 2 V ensures low voltage drop when fully on.
  • Compact size with dimensions 16.4 mm height by 10.4 mm length for space-conscious designs.
  • Designed as NPN polarity Darlington transistor for high current switching applications.

Product Description

STMicroelectronics BDW93CFP is a high-performance Darlington transistor engineered for amplification and switching applications requiring high current and voltage ratings. This NPN transistor features a maximum continuous collector current of 12 A and a maximum collector emitter voltage of 100 V, making it ideal for use in power control circuits, industrial equipment, and electronic assemblies.

The device is housed in a TO-220 package designed for through-hole mounting, facilitating easy installation on printed circuit boards (PCBs) and enabling efficient heat dissipation. It provides a minimum DC current gain (hFE) of 100, ensuring strong amplification with minimal signal loss.

The BDW93CFP transistor supports a maximum power dissipation of 33 W, suitable for medium-power applications in industrial and commercial electronic circuits. It can operate under a broad temperature range of -65°C to 150°C, which enhances reliability in harsh environments such as automotive electronics, HVAC systems, and manufacturing machinery.

Key operational parameters include a maximum collector emitter saturation voltage of 2 V and a maximum emitter base voltage of 5 V, contributing to efficient switching and control in electronic designs. The transistor features 3 pins configured to simplify integration and compatibility with standard circuit layouts.

These properties make the BDW93CFP a robust and versatile choice for applications including power amplifiers, motor drivers, relay drivers, and general-purpose high current switching devices.

High current gain HFE of 100 ensures efficient amplification performance. Maximum power dissipation rating of 33 W allows robust power handling. Wide operating temperature range from -65°C to 150°C supports demanding environments.

3-pin TO-220 through-hole package for easy PCB mounting and heat dissipation. Designed to handle up to 12 A continuous collector current and 100 V collector emitter voltage. Low saturation voltage minimizes power loss during operation.

Compact dimensions of 16.4 mm height and 10.4 mm length facilitate space-saving installations. Ideal for use in power amplifiers, relay drivers, motor control, and industrial electronics. Explore more STMicroelectronics semiconductor products and Darlington Transistors on EnvMart for your electronic design and manufacturing needs.

STMicroelectronics Darlington Transistor NPN 12 A 100 V, HFE 100, 3-Pin TO-220 BDW93CFP
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Frequently Asked Questions

The maximum continuous collector current for this model is 12 A.

It has a maximum collector emitter voltage of 100 V.

The maximum power dissipation rating is 33 W.

The operating temperature range is from -65°C to 150°C.

This model is housed in a TO-220 package designed for through-hole mounting.

The minimum DC current gain (hFE) is 100.

It features a 3-pin configuration.

The maximum collector emitter saturation voltage is 2 V.

The maximum emitter base voltage is 5 V.

It is suitable for applications such as power amplifiers, motor drivers, and relay drivers.

The dimensions are 16.4 mm in height and 10.4 mm in length.

This model is designed as an NPN polarity transistor.

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