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onsemi Transistor 2 A NPN 100 V 4-Pin SOT-223 Surface Mount NSS1C201MZ4T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | NSS1C201MZ4T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 140V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
| Nexperia Transistor, 1 A NPN, 100 V, 3-Pin SOT-89Brand | Nexperia |
Key Features
- Maximum DC collector current of 2 amperes.
- Maximum collector emitter voltage rating of 100 volts.
- Transistor configured as a single NPN device.
- Surface mount type with SOT-223 package having 4 pins.
- Maximum power dissipation up to 2 watts for reliable thermal performance.
- Minimum DC current gain (hFE) is 40, ensuring amplification capability.
- Maximum operating temperature up to 150 degrees Celsius.
- Automotive qualified to AEC-Q101 standard for enhanced robustness.
Product Description
onsemi NSS1C201MZ4T1G is a high-performance NPN bipolar transistor designed for general-purpose applications requiring up to 2 A collector current and 100 V collector emitter voltage. Packaged in a compact 4-pin SOT-223 surface mount enclosure, this transistor supports reliable and efficient switching and amplification in electronic circuits.
This transistor features a single configuration with a minimum DC current gain (hFE) of 40, ensuring dependable signal amplification. It has a maximum power dissipation rating of 2 watts, allowing it to operate safely under moderate power loads.
Designed to meet automotive standards, the NSS1C201MZ4T1G is qualified according to the rigorous AEC-Q101 specification, making it suitable for use in automotive electronics requiring high reliability and thermal endurance up to 150 degrees Celsius.
The package dimensions include a length of 6.7 mm, width of 3.7 mm, and height of 1.75 mm, making it suitable for compact PCB layouts in industrial, automotive, consumer electronics, and power management applications.
This transistor is ideal for a wide range of industrial applications including power switching, signal amplification, and general-purpose electronic circuits requiring robust performance in compact surface mount packages.
Maximum DC collector current of 2 amperes. Maximum collector emitter voltage of 100 volts. Single NPN transistor configuration. SOT-223 surface mount 4-pin package. Power dissipation up to 2 watts. Minimum DC current gain of 40.
Automotive qualified to AEC-Q101 standard. Maximum operating temperature: 150 °C. Explore more high-quality electronic components and bipolar transistors in the Electronics & Electricals category at EnvMart.
Explore more products in our Semiconductor category.
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Frequently Asked Questions
The maximum DC collector current for the NSS1C201MZ4T1G is 2 amperes.
This model has a maximum collector-emitter voltage rating of 100 volts.
It is packaged in a 4-pin SOT-223 surface mount configuration.
The maximum power dissipation for the NSS1C201MZ4T1G is up to 2 watts.
The minimum DC current gain (hFE) is 40, ensuring effective amplification capability.
The maximum operating temperature is up to 150 degrees Celsius.
Yes, it is automotive qualified to the AEC-Q101 standard, ensuring high reliability.
The package dimensions are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.
This transistor is configured as a single NPN device.
The maximum emitter-base voltage (VEBO) is 7 volts.
The maximum collector-base voltage (VCBO) rating is 140 volts DC.
This model is suitable for power switching, signal amplification, and general-purpose electronic circuits.
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