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onsemi Darlington Transistor NPN 8A 100V HFE 100, 3-Pin DPAK NJVMJD122T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NJVMJD122T4G |
| Mount Type | Surface |
| Series | MJD122 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 10μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi NJVMJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAK |
| STMicroelectronics MJD122T4 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAKBrand: STMicroelectronics |
| onsemi MJD122G 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAKBrand: onsemi |
| onsemi 1 Darlington Transistor NPN, 4 A 350 V HFE | 300, 3-Pin DPAKBrand: onsemi |
Key Features
- This transistor offers a high current gain (hFE) of 100.
- It supports maximum power dissipation of 20W for robust performance.
- The device has an automotive standard AEC-Q101 qualification.
- Operating temperature ranges from -65°C to 150°C ensuring reliability in extreme environments.
- The package height is 2.38mm and length is 6.73mm for compact surface mounting.
- The transistor polarity is NPN suitable for various switching and amplification applications.
- It contains 1 element per chip with three pin counts in a TO-252 (DPAK) package.
- Maximum collector cut-off current is 10μA, minimizing leakage.
Product Description
onsemi NJVMJD122T4G Darlington Transistor is a high-performance NPN transistor designed for robust power semiconductor applications. It supports a maximum continuous collector current of 8 amperes and withstands collector emitter voltages up to 100 volts. Packaged in a surface-mount TO-252 (DPAK) with a compact height of 2.38mm and length of 6.73mm, this component is ideal for space-constrained electronic circuits.
This device offers a minimum DC current gain (hFE) of 100, enabling efficient current amplification in switching and linear amplification circuits. The transistor’s maximum power dissipation rating of 20 watts ensures stable operation under demanding conditions.
Qualified to the automotive standard AEC-Q101, NJVMJD122T4G is suitable for automotive and industrial applications requiring reliability under harsh environments, with a wide operating temperature from -65°C to 150°C.
Its electrical characteristics include a maximum collector emitter saturation voltage of 2V, a low maximum collector cut-off current of 10 microamperes, and maximum emitter base and collector base voltages of 5V and 100V, respectively. The transistor’s NPN polarity and 3-pin configuration support a range of switching and power amplification uses.
This transistor provides high gain and reliable performance in power control circuits. Its surface mount TO-252 packaging supports compact PCB designs. Suitable for automotive, industrial, and general-purpose electronics applications.
Qualifies for automotive safety and reliability standards (AEC-Q101). Operates over a wide temperature range for diverse environmental conditions.
Leverage onsemi NJVMJD122T4G transistor for your next project in power electronics and discrete semiconductor applications. Explore more semiconductors and discrete components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for the NJVMJD122T4G transistor is 8 amperes.
This model has a maximum collector-emitter voltage rating of 100 volts.
The minimum DC current gain (hFE) for the NJVMJD122T4G is 100.
The maximum power dissipation for this transistor is 20 watts.
The TO-252 package has a height of 2.38mm and a length of 6.73mm.
The operating temperature range for the NJVMJD122T4G is from -65°C to 150°C.
This transistor has an NPN polarity, making it suitable for various switching and amplification applications.
The maximum collector cut-off current for this model is 10 microamperes.
The NJVMJD122T4G is qualified to the automotive standard AEC-Q101.
This model features a 3-pin configuration in its design.
The maximum collector-emitter saturation voltage (VceSAT) for this transistor is 2 volts.
This transistor is suitable for automotive, industrial, and general-purpose electronics applications.
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