World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi 4-Element Uni-Directional TVS Diode Array, 500 W, 8-Pin SOIC SRDA3.3-4DR2G

Free Delivery in India | Lowest Global Shipping Charges

onsemi 4-Element Uni-Directional TVS Diode Array, 500 W, 8-Pin SOIC SRDA3.3-4DR2G

Name: onsemi 4-Element Uni-Directional TVS Diode Array, 500 W, 8-Pin SOIC SRDA3.3-4DR2G
Brand: onsemi
SKU: 370205
Price: 0.8 USD
Availability: InStock



Category TVS Diode Array Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	SRDA3.3-4DR2G
Width	4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Number of Elements per Chip	4
Clamping Voltage VC	15V
Diode Configuration	Complex Array
Direction Type	Uni-Directional
Minimum Breakdown Voltage Vbr	5V
Maximum Reverse Stand-off Voltage Vwm	3.3V
Peak Pulse Power Dissipation Pppm	500W
Test Current It	1mA
Maximum Peak Pulse Current Ippm	10A
Maximum Reverse Leakage Current	5μA

Key Features

Features a complex diode array configuration with 4 elements per chip.
Uni-directional operation suitable for ESD protection in sensitive circuits.
Surface mount type with a compact SOIC package measuring 5mm x 4mm x 1.5mm.
Minimum breakdown voltage of 5V and maximum reverse stand-off of 3.3V for precise voltage clamping.
Clamping voltage rated at 15V and can handle peak pulse current up to 10 A.
Operates reliably between -55°C to 150°C temperature range.
Low maximum reverse leakage current of 5μA to ensure minimal power losses.

Product Description

onsemi SRDA3.3-4DR2G is a 4-element uni-directional TVS diode array designed for transient voltage suppression in electronic equipment. It delivers a peak pulse power dissipation of 500 W ensuring robust protection against voltage spikes and electrostatic discharge (ESD). Packaged in a compact 8-pin SOIC surface mount device, this diode array is suitable for high density PCB assembly.

The diode configuration utilizes a complex array of 4 elements per chip allowing efficient transient suppression and enhanced reliability. Its uni-directional design ensures protection against voltage transients in one polarity, making it ideal for power supply and signal line safeguarding.

Electrical characteristics include a minimum breakdown voltage of 5 V and a maximum reverse stand-off voltage of 3.3 V. The device clamps voltage at 15 V during transient events with a peak pulse current capacity of 10 A, making it suitable for protecting sensitive electronic components from voltage surges.

This TVS diode array supports a wide operating temperature range from -55°C to +150°C, suitable for industrial, automotive, and commercial applications. Its low maximum reverse leakage current of 5 μA minimizes static power consumption, enhancing overall circuit efficiency.

Complex diode array configuration with 4 elements per chip. Uni-directional transient voltage suppression for robust ESD protection. Compact SOIC 8-pin surface mount package measuring 5mm length, 4mm width, and 1.5mm height.

Peak pulse power dissipation of 500 W and peak pulse current rating of 10 A. Clamping voltage of 15 V to protect circuits from voltage spikes. Wide operating temperature range from -55°C to 150°C ensuring durability. Low maximum reverse leakage current of 5 μA reduces power losses.

This onsemi SRDA3.3-4DR2G TVS Diode Array is highly suitable for use in electronic components manufacturing, power and connector assemblies, semiconductor applications, and any industry requiring effective transient voltage suppression. It enhances system reliability by protecting sensitive electronic components from damaging voltage transients arising in automotive, industrial, telecommunications, and consumer electronics markets.

Explore onsemi and TVS Diode Arrays with EnvMart for detailed product selections dedicated to industrial and commercial semiconductor solutions.

Looking to purchase in bulk?

Purchase item in bulk quantity
Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The peak pulse power dissipation of the onsemi SRDA3.3-4DR2G is 500 W, ensuring robust protection against voltage spikes.

The maximum reverse stand-off voltage for this diode array is 3.3 V, which is crucial for protecting sensitive circuits.

The clamping voltage during transient events is rated at 15 V, providing effective protection against voltage surges.

This model operates reliably within a temperature range of -55°C to 150°C, making it suitable for various applications.

The diode configuration features a complex array with 4 elements per chip, enhancing its transient suppression capabilities.

The maximum peak pulse current that this TVS diode array can handle is 10 A, ensuring it can manage significant transient events.

The SOIC package of this model measures 5 mm in length, 4 mm in width, and 1.5 mm in height, allowing for compact PCB assembly.

The maximum reverse leakage current for the onsemi SRDA3.3-4DR2G is 5 μA, which helps minimize power losses in circuits.

This model uses surface mount technology, making it suitable for high-density PCB applications.

The minimum breakdown voltage for this unit is 5 V, which is essential for its operation in transient voltage suppression.

This TVS diode array is suitable for protecting sensitive electronic components in automotive, industrial, telecommunications, and consumer electronics applications.

The direction type of this model is uni-directional, providing effective transient voltage suppression in one polarity.