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onsemi 4-Element Uni-Directional TVS Diode Array 500 W, 8-Pin SOIC SRDA3.3-4DR2G

Category TVS Diode Array Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model SRDA3.3-4DR2G
Width 4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 4
Clamping Voltage VC 15V
Diode Configuration Complex Array
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 5V
Maximum Reverse Stand-off Voltage Vwm 3.3V
Peak Pulse Power Dissipation Pppm 500W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 10A
Maximum Reverse Leakage Current 5μA

Key Features

  • Provides a peak pulse power dissipation of 500 watts.
  • Features a complex diode array configuration with 4 elements per chip.
  • Uni-directional direction type suitable for protection against voltage spikes.
  • Compact surface mount SOIC package with 8 pins for easy PCB integration.
  • Clamping voltage is rated at 15 volts for effective voltage transient clamping.
  • Operating temperature ranges from -55°C to 150°C for reliable performance under harsh conditions.
  • Low maximum reverse leakage current of 5 microamperes minimizes power loss.
  • Designed for ESD protection enhancing circuit reliability.

Product Description

onsemi SRDA3.3-4DR2G is a 4-element uni-directional transient voltage suppressor (TVS) diode array designed for the protection of sensitive electronic components from voltage spikes, surges, and electrostatic discharge (ESD). This device is suitable for industrial, automotive, telecommunications, and consumer electronic applications where transient voltage protection is essential.

Featuring a complex diode array configuration with four elements per chip, the SRDA3.3-4DR2G provides robust transient voltage suppression with a peak pulse power dissipation of 500 W. The device operates within a temperature range of -55°C to 150°C, ensuring reliable function in demanding environments.

The product is housed in an 8-pin surface mount SOIC package that facilitates compact PCB designs and efficient assembly. Its uni-directional configuration is optimized for applications requiring protection against positive voltage transients. The maximum reverse stand-off voltage is 3.3 V with a typical clamping voltage of 15 V, offering effective protection against damage from voltage surges.

The device exhibits a low maximum reverse leakage current of 5 µA, reducing power consumption during normal operation. It is designed to handle a maximum peak pulse current of 10 A, ensuring circuit protection during high-energy transient events. Test current is rated at 1 mA for standardized testing and validation.

This TVS diode array is ideal for use in industrial electronic circuits, telecommunications equipment, automotive electric systems, and commercial electronic devices requiring ESD protection.

Provides a peak pulse power dissipation of 500 watts. Features a complex diode array with four elements per chip. Uni-directional transient voltage suppression for reliable protection. Compact 8-pin SOIC surface mount package for easy PCB integration.

Operating temperature range from -55°C to 150°C. Low reverse leakage current of 5 µA minimizes power loss. Test current of 1 mA with 10 A maximum peak pulse current capacity. Clamping voltage rated at 15 V for surge protection.

Dimensions: 5 mm length, 4 mm width, and 1.5 mm height. Designed for ESD protection improving circuit durability and reliability.

Choose onsemi TVS Diode Arrays for effective transient voltage suppression in demanding industrial, laboratory, automotive, and commercial applications. Browse our comprehensive selection of semiconductor protection components at EnvMart.

onsemi 4-Element Uni-Directional TVS Diode Array 500 W, 8-Pin SOIC SRDA3.3-4DR2G
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Frequently Asked Questions

The peak pulse power dissipation of this model is 500 watts.

The clamping voltage is rated at 15 volts, providing effective voltage transient clamping.

It operates within a temperature range of -55°C to 150°C, ensuring reliable performance in harsh conditions.

This model features a complex diode array configuration with four elements per chip.

The maximum reverse leakage current is 5 microamperes, which minimizes power loss during operation.

It can handle a maximum peak pulse current of 10 A, ensuring circuit protection during high-energy transient events.

The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.

It is housed in an 8-pin surface mount SOIC package, facilitating compact PCB designs and efficient assembly.

The maximum reverse stand-off voltage is 3.3 V, providing effective protection against voltage surges.

It is suitable for industrial, automotive, telecommunications, and consumer electronic applications requiring transient voltage protection.

The test current is rated at 1 mA for standardized testing and validation purposes.

It has a uni-directional direction type, optimized for applications requiring protection against positive voltage transients.

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