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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | SRDA3.3-4DR2G |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Clamping Voltage VC | 15V |
| Diode Configuration | Complex Array |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 5V |
| Maximum Reverse Stand-off Voltage Vwm | 3.3V |
| Peak Pulse Power Dissipation Pppm | 500W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 10A |
| Maximum Reverse Leakage Current | 5μA |
onsemi SRDA3.3-4DR2G is a 4-element uni-directional transient voltage suppressor (TVS) diode array designed for the protection of sensitive electronic components from voltage spikes, surges, and electrostatic discharge (ESD). This device is suitable for industrial, automotive, telecommunications, and consumer electronic applications where transient voltage protection is essential.
Featuring a complex diode array configuration with four elements per chip, the SRDA3.3-4DR2G provides robust transient voltage suppression with a peak pulse power dissipation of 500 W. The device operates within a temperature range of -55°C to 150°C, ensuring reliable function in demanding environments.
The product is housed in an 8-pin surface mount SOIC package that facilitates compact PCB designs and efficient assembly. Its uni-directional configuration is optimized for applications requiring protection against positive voltage transients. The maximum reverse stand-off voltage is 3.3 V with a typical clamping voltage of 15 V, offering effective protection against damage from voltage surges.
The device exhibits a low maximum reverse leakage current of 5 µA, reducing power consumption during normal operation. It is designed to handle a maximum peak pulse current of 10 A, ensuring circuit protection during high-energy transient events. Test current is rated at 1 mA for standardized testing and validation.
This TVS diode array is ideal for use in industrial electronic circuits, telecommunications equipment, automotive electric systems, and commercial electronic devices requiring ESD protection.
Provides a peak pulse power dissipation of 500 watts. Features a complex diode array with four elements per chip. Uni-directional transient voltage suppression for reliable protection. Compact 8-pin SOIC surface mount package for easy PCB integration.
Operating temperature range from -55°C to 150°C. Low reverse leakage current of 5 µA minimizes power loss. Test current of 1 mA with 10 A maximum peak pulse current capacity. Clamping voltage rated at 15 V for surge protection.
Dimensions: 5 mm length, 4 mm width, and 1.5 mm height. Designed for ESD protection improving circuit durability and reliability.
Choose onsemi TVS Diode Arrays for effective transient voltage suppression in demanding industrial, laboratory, automotive, and commercial applications. Browse our comprehensive selection of semiconductor protection components at EnvMart.
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