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| Country of Origin | India |
|---|---|
| Diameter | 2.7mm |
| Brand | onsemi |
| Height | 5.2mm |
| Length | 2.7mm |
| Model | MUR110RLG |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V |
The onsemi MUR110RLG is a high-quality switching diode featuring a single silicon junction configuration. Designed to handle a maximum forward current of 1 ampere, this diode is packaged in a through-hole DO-41 package with 2 pins, ensuring easy PCB mounting and integration in various electronic assemblies.
With a peak repetitive reverse voltage of 100 V and a maximum forward voltage of 875 mV, the MUR110RLG diode provides strong blocking capability and efficient forward conduction. It withstands high transient currents, featuring a peak non-repetitive forward surge current of 35 A, suitable for applications with sudden surges.
The device operates efficiently across a wide temperature range from -65°C to +175°C, making it suitable for harsh industrial and electronic environments. Its fast peak reverse recovery time of 35 nanoseconds minimizes switching losses, improving performance in high-frequency circuits.
Physically, the diode measures 2.7 mm in diameter and width, and 5.2 mm in height, occupying a compact footprint without compromising thermal and electrical performance. It lacks specific industry standards or automotive approvals but is recognized for its reliability in rectifier diode applications requiring up to 1A current handling.
Maximum forward current rating of 1 ampere ensures reliable conduction. Peak repetitive reverse voltage of 100 volts provides suitable blocking capability. Through hole mount and DO-41 package type enhance PCB assembly compatibility.
Fast peak reverse recovery time of 35 ns improves switching efficiency. Wide operating temperature from -65°C to 175°C accommodates diverse use cases. Supports peak surge currents up to 35 A for transient overloads. Compact 2.7 mm diameter and width with 5.2 mm height ensures space saving.
Two pins ensure straightforward electrical connections. Standard silicon junction diode suitable for industrial and electronic applications.
This switching diode from onsemi is ideal for use in power supply circuits, rectification, signal demodulation, and switching applications across industrial, electronic, and manufacturing sectors. Its robust electrical characteristics offer dependable performance in demanding environments.
Explore more Semiconductor components and switching diode options at EnvMart to support your power management and electronic design needs.
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