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Nexperia Silicon Junction Switching Diode Single 250 mA 2-Pin 100 V SOD-323 BAS16J,115

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Nexperia Silicon Junction Switching Diode Single 250 mA 2-Pin 100 V SOD-323 BAS16J,115

Name: Nexperia Silicon Junction Switching Diode Single 250 mA 2-Pin 100 V SOD-323 BAS16J,115
Brand: Nexperia
SKU: 369312
Price: 0.04 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	0.8mm
Length	1.8mm
Model	BAS16J,115
Width	1.35mm
Mount Type	Surface
Series	BAS16
Maximum Operating Temperature	150°C
Package Type	SOD-323
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	550mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	250mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V
onsemi Switching Diode, Single, 200 mA, 2-Pin 100 V SOD-323 SBAS16HT1GBrand	onsemi

Key Features

Supports customised high density circuit designs.
Low-leakage and high-voltage capabilities suitable for switching applications.
High switching speed with a peak reverse recovery time of 4 ns.
Maximum power dissipation of 550 mW ensures reliable operation.
Compact dimensions with length 1.8 mm, width 1.35 mm, and height 0.8 mm.
Wide operating temperature range from -65°C to 150°C.
Peak non-repetitive forward surge current rated at 4 A.
Package type SOD-323 enables easy surface mount PCB integration.

Product Description

Nexperia BAS16J,115 is a silicon junction switching diode designed for use in advanced electronic and power circuits. This single diode configuration supports a maximum forward current of 250 mA and maximum reverse repetitive voltage of 100 V, making it ideal for switching and signal modulation tasks.

Its SOD-323 surface mount package features a small form factor with a length of 1.8 mm, width of 1.35 mm, and a height of 0.8 mm, allowing dense PCB layouts. The diode achieves high switching speeds with a peak reverse recovery time of just 4 nanoseconds and a power dissipation rating of 550 mW ensures robust performance under load.

Operating reliably over a wide temperature range from -65°C up to 150°C, it can be employed in diverse environmental conditions. The device also supports a peak non-repetitive forward surge current up to 4 A, accommodating transient bursts without damage.

Low leakage current and high-voltage handling capabilities make the BAS16J,115 suitable for high density circuit designs requiring fast switching diodes with excellent durability. Supports customised high density circuit designs.

Low-leakage and high-voltage types available suitable for switching applications. High switching speeds with 4 ns peak reverse recovery time. Maximum power dissipation of 550 mW for reliability. Compact SOD-323 surface mount package.

Wide operating temperature from -65°C to 150°C. Handles peak surge currents up to 4 A. Dimensions: 1.8 mm length, 1.35 mm width, 0.8 mm height.

This diode is widely used for industrial electronics, telecommunications, power supply protection, and signal processing applications. It ensures efficient performance in compact and demanding environments such as manufacturing equipment, laboratory instrumentation, and commercial electronic devices.

Originating from China, this new diode from Nexperia merges performance with reliability for precise switching control in your electronic designs. Browse the full range of Switching Diodes and discrete semiconductor components on EnvMart for comprehensive solutions.