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Nexperia Silicon Junction Switching Diode Single 215mA 100V SOD-123 BAS16H,115

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Nexperia Silicon Junction Switching Diode Single 215mA 100V SOD-123 BAS16H,115

Name: Nexperia Silicon Junction Switching Diode Single 215mA 100V SOD-123 BAS16H,115
Brand: Nexperia
SKU: 360049
Price: 0.05 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.2mm
Length	2.7mm
Model	BAS16H,115
Width	1.7mm
Mount Type	Surface
Series	BAS16
Maximum Operating Temperature	150°C
Package Type	SOD-123
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
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RS Stock No.	725-8688PBrand: NexperiaManufacturers Part No.: BAS16H,115
Pin Count	2
Maximum Power Dissipation Pd	380mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V

Key Features

The diode supports surface mount technology with 2 pins for efficient assembly.
It offers a maximum forward voltage of 1.25V ensuring low power loss.
The device has a peak reverse recovery time of 4 nanoseconds, enabling high-speed switching.
Operating temperature ranges from -65°C to 150°C, suitable for varied environments.
Maximum power dissipation is rated at 380mW to maintain reliability during operation.
The diode is constructed with a silicon junction offering stable electrical performance.
Its small dimensions (2.7mm length, 1.7mm width, 1.2mm height) allow compact circuit designs.
The product is manufactured in China ensuring consistent quality standards.

Product Description

Nexperia BAS16H,115 is a silicon junction switching diode designed for use in electronic circuits requiring high-speed switching and reliable performance. Packaged in a SOD-123 surface mount configuration, this diode supports a maximum forward current of 215mA and withstands peak reverse voltages of 100V, making it ideal for various discrete semiconductor applications.

The diode features a low forward voltage drop of 1.25V and a very fast peak reverse recovery time of 4 nanoseconds, suitable for modern high-frequency switching circuits. It operates efficiently in temperature ranges from -65°C to 150°C, ensuring robustness in both industrial and commercial electronic environments.

Its compact size (2.7mm length, 1.7mm width, 1.2mm height) and 2-pin design optimize board space, contributing to high-density circuit layouts. The diode’s maximum power dissipation rating of 380mW conveys its capability to handle power safely within designed electrical limits.

Typical applications include power management, switching, and rectification tasks in electronics, telecommunications, and consumer devices. Key features include:. Single silicon junction design providing dependable switching capability.

Surface mount package SOD-123 for efficient PCB mounting. High peak reverse voltage of 100V supporting voltage stresses. Low forward voltage to minimize energy loss under load. Fast switching speed owing to 4ns peak reverse recovery time.

Wide operating temperature range for versatility across environments. Lightweight and compact construction for space saving. Manufactured in China to stringent quality standards.

This switching diode is suited for industrial, laboratory, manufacturing, and commercial electronics requiring efficient diode solutions. For further product exploration, browse related Switching Diodes and electronic components at EnvMart.