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| Country of Origin | Mexico |
|---|---|
| Brand | onsemi |
| Height | 8.51mm |
| Length | 39.37mm |
| Model | MJ11015G |
| Mount Type | Through Hole |
| Series | MJ11012 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-1502Brand: onsemiManufacturers Part No.: MJ11015G |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | -20A |
| Maximum Collector Emitter Voltage Vceo | 120V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Power Dissipation Pd | 200W |
The onsemi MJ11015G is a high power PNP Darlington bipolar transistor designed for use as an output device in general purpose amplifier applications. It supports a maximum continuous collector current of 20 A and can withstand collector-emitter voltages up to 120 V, making it suitable for demanding power transistor roles in industrial, laboratory, and electronic equipment.
The transistor features a high DC current gain with a minimum hFE of 200, enabling efficient amplification with low base current requirements. Constructed with monolithic technology, it includes a built-in base emitter shunt resistor to enhance circuit stability and reliability under varying conditions.
Encased in a Pb-free TO-204AA (TO-3) through-hole package, the device facilitates robust mounting and heat dissipation. It can operate safely from -55°C up to a junction temperature of 200°C, supporting high temperature industrial environments.
With 3 pins and PNP transistor polarity, the MJ11015G is compatible with a wide range of analog electronics designs and power switching controls. Its impressive maximum power dissipation of 200 W ensures long-term durability and performance stability.
The transistor’s length is 39.37 mm and height is 8.51 mm, which aligns with standard TO-204 package dimensions, facilitating easy replacement and design flexibility. Originating from Mexico, it adheres to stringent manufacturing standards for quality and consistency.
High DC Current Gain with minimum hFE of 200. Maximum collector current of 20 A for high power applications. Collector emitter voltage rating of 120 V. Robust TO-204 through-hole packaging. Wide operating temperature range from -55°C to 200°C.
Built-in base emitter shunt resistor for stable operation. Monolithic construction for enhanced reliability. PNP transistor polarity ideal for complementary circuits. Maximum power dissipation of 200 W suitable for power electronics.
This transistor is widely used in industrial controls, power amplifiers, switching circuits, and other applications requiring high current and voltage handling capabilities. It is an excellent choice for engineers and technicians designing power electronics and amplifier modules.
Explore the Electronics & Electricals category at EnvMart for a wide range of semiconductors and discrete components including Darlington Transistors like the onsemi MJ11015G.
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