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onsemi PNP Darlington Transistor, 20 A, 120 V, HFE 200, 3-Pin TO-204 Package MJ11015G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin Mexico
Brand onsemi
Height 8.51mm
Length 39.37mm
Model MJ11015G
Mount Type Through Hole
Series MJ11012
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -55°C
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RS Stock No. 688-1502Brand: onsemiManufacturers Part No.: MJ11015G
Pin Count 3
Maximum Continuous Collector Current Ic -20A
Maximum Collector Emitter Voltage Vceo 120V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 200
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 3V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 200W

Key Features

  • High current gain with a minimum DC gain (hFE) of 200.
  • Designed for general purpose amplifier applications.
  • High power dissipation capability rated at 200 W.
  • Operates at temperatures from -55°C to +200°C.
  • Monolithic construction ensures reliable performance.
  • Built-in base emitter shunt resistor for improved stability.
  • 3-pin through-hole mount type for easy PCB integration.
  • Package dimensions approximately 8.51 mm height and 39.37 mm length.

Product Description

The onsemi MJ11015G is a high power PNP Darlington bipolar transistor designed for use as an output device in general purpose amplifier applications. It supports a maximum continuous collector current of 20 A and can withstand collector-emitter voltages up to 120 V, making it suitable for demanding power transistor roles in industrial, laboratory, and electronic equipment.

The transistor features a high DC current gain with a minimum hFE of 200, enabling efficient amplification with low base current requirements. Constructed with monolithic technology, it includes a built-in base emitter shunt resistor to enhance circuit stability and reliability under varying conditions.

Encased in a Pb-free TO-204AA (TO-3) through-hole package, the device facilitates robust mounting and heat dissipation. It can operate safely from -55°C up to a junction temperature of 200°C, supporting high temperature industrial environments.

With 3 pins and PNP transistor polarity, the MJ11015G is compatible with a wide range of analog electronics designs and power switching controls. Its impressive maximum power dissipation of 200 W ensures long-term durability and performance stability.

The transistor’s length is 39.37 mm and height is 8.51 mm, which aligns with standard TO-204 package dimensions, facilitating easy replacement and design flexibility. Originating from Mexico, it adheres to stringent manufacturing standards for quality and consistency.

High DC Current Gain with minimum hFE of 200. Maximum collector current of 20 A for high power applications. Collector emitter voltage rating of 120 V. Robust TO-204 through-hole packaging. Wide operating temperature range from -55°C to 200°C.

Built-in base emitter shunt resistor for stable operation. Monolithic construction for enhanced reliability. PNP transistor polarity ideal for complementary circuits. Maximum power dissipation of 200 W suitable for power electronics.

This transistor is widely used in industrial controls, power amplifiers, switching circuits, and other applications requiring high current and voltage handling capabilities. It is an excellent choice for engineers and technicians designing power electronics and amplifier modules.

Explore the Electronics & Electricals category at EnvMart for a wide range of semiconductors and discrete components including Darlington Transistors like the onsemi MJ11015G.

onsemi PNP Darlington Transistor, 20 A, 120 V, HFE 200, 3-Pin TO-204 Package MJ11015G
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Frequently Asked Questions

The maximum continuous collector current for this model is 20 A, making it suitable for high power applications.

The collector-emitter voltage rating is 120 V, allowing it to handle significant voltage levels in various applications.

This transistor has a minimum DC current gain (hFE) of 200, which facilitates efficient amplification with low base current requirements.

The dimensions of this unit are approximately 39.37 mm in length and 8.51 mm in height, conforming to the TO-204 package specifications.

It has a maximum power dissipation capability rated at 200 W, which supports its use in demanding power applications.

The MJ11015G operates effectively in a temperature range from -55°C to 200°C, making it suitable for high temperature environments.

This model is encased in a TO-204AA (TO-3) through-hole package, which facilitates robust mounting and heat dissipation.

The transistor polarity of this model is PNP, which is ideal for complementary circuit designs.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V, ensuring stable operation in various circuit configurations.

This transistor is widely used in industrial controls, power amplifiers, and switching circuits, particularly where high current and voltage handling capabilities are required.

This model features a 3-pin configuration, which is standard for many through-hole transistors, facilitating easy PCB integration.

The MJ11015G is manufactured in Mexico, adhering to stringent quality and consistency standards.

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